Hamamatsu-photonics K.k.

Takafumi Higuchi

Tadashi Maruno

Eiji Toda

Teruo Takahashi

Mao Nakajima

Kazuhiro Hotta

Tomochika Takeshima

A semiconductor apparatus examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor apparatus, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Semiconductor apparatus examination method and semiconductor apparatus examination apparatus

A semiconductor inspection method by an observation system includes a step of acquiring a first pattern image showing a pattern of a semiconductor device, a step of acquiring a second pattern image showing a pattern of the semiconductor device and having a different resolution from a resolution of the first pattern image, a step of learning a reconstruction process of the second pattern image using the first pattern image as training data by machine learning, and reconstructing the second pattern image into a reconstructed image having a different resolution from a resolution of the second pattern image by the reconstruction process based on a result of the learning, and a step of performing alignment based on a region calculated to have a high degree of certainty by the reconstruction process in the reconstructed image and the first pattern image.

Method for inspecting semiconductor and semiconductor inspecting device

An observation system includes a detector that detects light from a semiconductor device and outputs a detection signal, a 2D camera, an optical device that guides light to the detector and the 2D camera, an image processing unit that generates a first optical image of the semiconductor device based on the detection signal and receives an input of a first CAD image, an image analysis unit that learns a conversion process of the first CAD image by machine learning using the first optical image as training data, and converts the first CAD image into a second CAD image resembling the first optical image by the conversion process based on a result of the learning, and an alignment unit that performs alignment based on a second optical image and the second CAD image.

Semiconductor inspection device and semiconductor inspection method

A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Photon counting device and photon counting method

A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Semiconductor device examination method and semiconductor device examination device

A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

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Hamamatsu, Japan

Takafumi Higuchi