Jx Metals Corporation

Jx Advanced Metals Corporation

Takafumi Dasai

Takeo Okabe

Shinichiro Senda

Takayuki Asano

Seiji Nakasumi

Shinji Sogawa

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSiphase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSiwith X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μmor more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film

According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 μm.

Tungsten sputtering target and method for manufacturing the same

There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction.

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Ibaraki, Japan

Takafumi Dasai