Hitachi, Ltd.

Nippon Hoso' Kyokai

Takaaki Unnai

Tadaaki Hirai

Junichi Yamazaki

Kenji Sameshima

Keiichi Shidara

Kenkichi Tanioka

Masanao Yamamoto

Hirofumi Ogawa

Shirou Suzuki

Eikiyu Hiruma

Yukio Takasaki

Yasuhiko Nonaka

Eisuke Inoue

Akiya Izumi

Shigeru Ehata

Eikyu Hiruma

Misao Kubota

Misturu Hinosugi

An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Image pick-up tube and apparatus having the same

An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Method of fabricating an image pick-up tube and target section used

A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.

Method of making a photosensor

There is disclosed an image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As and Se, the average concentration of As in the first layer being below 8% by weight, a second layer containing As and Se, a third layer containing As and Se, the concentration of As being in the range of 8 to 20% by weight and thickness of the third layer being in the range of 5 to 50% of the total thickness of the P-type photoconductive film, in the order named, and a beam landing layer.

Image pick-up tube target

In forming a fluorescent screen for a cathode ray tube, an undercoat layer is first coated on the inner face of the panel. The undercoat layer contains at least polystyrene particles with a film weight of 0.002 to 0.04 mg/cm.sup.2. Coated on the undercoat layer is phosphor slurry.

Method for forming a fluorescent screen

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Mobara, Japan

Takaaki Unnai