Sony Corporation

Sony Semiconductor Solutions Corporation

Takaaki Tatsumi

Hiroshi Isobe

Takeshi Matsushita

Koichi Hayakawa

Katsuhiko Fukasaku

Misao Kusunoki

The present technique relates to an electrostatic protective element that enables protective performance with respect to static electricity to be improved and to an electronic device. An electrostatic protective element includes: a first impurity region of a first conductivity type which is formed on the predetermined surface side of a semiconductor substrate; a second impurity region of a second conductivity type which is formed on the predetermined surface side of the semiconductor substrate so as to form a clearance in a horizontal direction with respect to the first impurity region; a collector contact which is formed on the predetermined surface side in the first impurity region, which has a higher concentration than the first impurity region, and which is an impurity region of the first conductivity type; a base contact which is formed on the predetermined surface side in the second impurity region, which has a higher concentration than the second impurity region, and which is an impurity region of the second conductivity type; and an emitter contact which is formed on the predetermined surface side in the second impurity region at a position that is closer to the collector contact than the base contact, which has a higher concentration than the second impurity region, and which is an impurity region of the first conductivity type. The present technique can be applied to, for example, an electronic device.

Electrostatic protective element and electronic device

The present disclosure relates to a semiconductor device and an electronic apparatus that make it possible to provide a higher voltage resistance. An outer-peripheral structure region is provided in an n-type well on a surface of a semiconductor substrate, the outer-peripheral structure region being arranged to surround an outer periphery of a region in which a plurality of semiconductor elements is formed. Further, an anode is arranged in an innermost in the outer-peripheral structure region, and a plurality of guard rings is multiply arranged on an outside of the anode. Furthermore, a field plate covering the anode and a field plate covering a guard ring adjacent to the anode are formed to be electrically connected to each other so as to be combined. The present technology is applicable to, for example, various semiconductor devices.

Semiconductor device and electronic apparatus

A semiconductor integrated circuit of the present disclosure includes: first power and second power supply lines that are coupled to a protected circuit; a third power supply line that is supplied with a voltage different from voltages supplied to the first and second power supply lines; a detection circuit that is coupled between the first and second power supply lines and detects a surge occurring in the first power supply line; an inverter circuit that includes one or more inverters coupled in series, and is coupled between the first and second power supply lines; a protection transistor that is coupled between the first and second power supply lines, and is controlled by an output of the detection circuit to cause the surge to flow through the second power supply line; and a time constant circuit that is coupled to at least the third power supply line and the protection transistor.

Semiconductor integrated circuit

Both an improvement of on-current and suppression of leakage current of a transistor are achieved. A transistor includes a drain, a source, a gate, and a gate insulating film. In the transistor, the gate insulating film is disposed between the source and the drain. In addition, in the transistor, the gate has a plurality of regions provided on a surface of the gate insulating film. In addition, in the gate, the plurality of regions provided on the gate insulating film have different work functions.

Transistor, protection circuit, and method of manufacturing transistor

A field-effect transistor including a gate electrode provided on a first-conductivity-type region of a semiconductor substrate with an insulating film provided between the gate electrode and the first-conductivity-type region, a source region of a second conductivity type provided in the semiconductor substrate on one of sides across the gate electrode, a drain region of the second conductivity type provided in the semiconductor substrate on the other of the sides, the other side facing the one side across the gate electrode, a first region of the first conductivity type provided below the drain region and having a higher concentration than the first-conductivity-type region, a second region of the first conductivity type provided to reach a surface in the semiconductor substrate on the other side and having a higher concentration than the first-conductivity-type region, and an extraction electrode connected to the second region.

Field-effect transistor and semiconductor device

Provided is a method of driving a protective circuit, the protective circuit including a first clamp section and a second clamp section, the first clamp section including a first device, the first clamp section being configured to protect an entire protected circuit of a predetermined area when the first device is driven, the second clamp section including a second device, the second clamp section being configured to protect a predetermined device of the protected circuit when the second device is driven, the method comprising: connecting a predetermined spot of the first clamp section and the gate of the second device of the second clamp section; and causing the gate voltage of the second device to be the potential of the predetermined spot.

Protective circuit, electronic device, and method of driving a protective circuit

A protection element includes a first wiring line configured to be supplied with a signal voltage when electric current is on; a second wiring line configured to be supplied with a criterion voltage; a detection circuit connected between the first wiring line and the second wiring line, and configured to detect the signal voltage inputted onto the first wiring line; an inverter circuit including a plurality of inverters connected between the first wiring line and the second wiring line, and configured to be supplied with a reference voltage having a same level as that of the signal voltage between an odd-numbered inverter and an even-numbered inverter when electric current is on; and a protection transistor connected between the first wiring line and the second wiring line, and having a gate configured to receive output of the inverter circuit.

Protection element, semiconductor device, and electronic system

Disclosed herein is a semiconductor integrated circuit including in a same semiconductor substrate: first and second power supply lines; a protected circuit being connected between the first and second power supply lines and provided with a supply voltage; a detecting circuit detecting a surge generated in the first power supply line; an inverter circuit having one or more inverters connected in series to each other; and a protection transistor being connected between the first and second power supply lines and controlled by output of the detecting circuit to discharge the surge to the second power supply line. In the inverter circuit, an inverter whose output is connected to a control node of the protection transistor is connected between the first power supply line and a third power supply line that is different from the first and second power supply lines.

Disclosed herein is a protection element for protecting a circuit element. The protection element includes source and drain areas created in a semiconductor layer, a gate created on the semiconductor layer, sandwiching a gate insulation film between the gate and the semiconductor layer, a source electrode connected to the surface of the source area and electrically connected to the ground, a drain electrode connected to the surface of the drain area and used for receiving a surge input, and a diode connected between the source electrode and the gate.

Protection element and semiconductor device having the protection element

There is provided a method for simulating the electrical characteristics of an electronic device including a step of specifying the material, electrical characteristics, and shape of a part of interest of the electronic device, the specification of the shape being performed by selecting it from among several preselected simplified shape models to obtain required data easily. Further, it is possible to reuse such data as input data for various simulators. The data can be accurately created in a shorter period of time.

Method for simulating electrical characteristics of electronic device

In a semiconductor device characteristic simulation apparatus and its method, performance characteristics of a semiconductor integrated circuit are image-displayed as a distribution on a semiconductor substrate without actually fabricating the semiconductor integrated circuit. To simulate the fluctuation in device characteristic values of a plurality of semiconductor integrated circuits formed on a semiconductor substrate by applying various types of processing to the semiconductor substrate, the present invention generates simulation data for executing simulations in accordance with measured data for a plurality of predetermined portions on the semiconductor substrate after processed, calculates device characteristic values of the semiconductor integrated circuits in accordance with the simulation data, and displays the fluctuation of device characteristic values as a distribution on the semiconductor substrate.

Semiconductor device characteristic simulation apparatus and its method

A semiconductor substrate, a thin film semiconductor device, a manufacturing method thereof and an anodizing apparatus which can reduce the manufacturing cost and save the resources are provided. According to this invention, a semiconductor thin film is formed through a separation layer of a porous semiconductor on a substrate body of sapphire; the semiconductor thin film is separated from the porosity layer and used for a thin film semiconductor device; and the substrate body from which the semiconductor thin film is separated is used again after the separation layer attached thereto is removed by etching. Since sapphire has high strength, high rigidity, high resistance to wearing, high heat resistance, high abrasion resistance and high chemicals resistance, no deterioration and no damage occur even when the substrate body is repetitively used. Thus, the recycle frequency can be increased, and the reduction of the manufacturing cost and the saving of the resources can be promoted.

Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus

A simulation apparatus for simulating a characteristic of a semiconductor circuit, including; a distribution information input unit for receiving a distribution information, the distribution information including a range and/or profile of distribution of a variation of a device parameter and/or a process parameter of the semiconductor circuit and being adaptive to an actual distribution; a random number generating unit for generating a random number on the basis of a probability responsive to the received distribution information; a characteristic calculation unit for calculating a dominant formula by using the random number to obtain a characteristic of the semiconductor circuit; and an output unit for outputting the resultant characteristic of the semiconductor circuit.

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Kanagawa, Japan

Takaaki Tatsumi