Hitachi Chemical Company, Ltd.

Takaaki Tanaka

Takashi Shinoda

Masato Fukasawa

Shigeru Nobe

Takafumi Sakurada

Munehiro Oota

Shigeru Yoshikawa

Toshio Takizawa

Takahiro Yoshikawa

Takaaki Matsumoto

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2&#x3b8;=27.000 to 29.980&#xb0; in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36&#xb0;, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 &#x3bc;m or greater is 5000&#xd7;10/mL or less.

Polishing liquid for CMP, polishing liquid set for CMP, and polishing method

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of &#x2014;COOM group, -Ph-OM group, &#x2014;SOM group and &#x2014;POMgroup, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

Polishing liquid and method for polishing substrate using the polishing liquid

Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.

Polishing slurry for metal films and polishing method

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Kokubunji, Japan

Takaaki Tanaka