Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Takaaki Shirasawa

Mitsunori Aiko

Shintaro Araki

Nobuyoshi Kimoto

Natsuki Tsuji

Takahiko Murakami

Yuki Hata

Ryoji Murai

Tsuyoshi Takayama

Gourab Majumdar

Tetsuya Ueda

Khalid Hassan Hussein

Takeshi Omaru

Korehide Okamoto

Hideo Komo

Yasuo Koutake

Takeshi Ohmaru

Mitsunori Kubo

It is an object to provide a technique allowing for suppression of the height of a protrusion from the surface of a semiconductor module. A semiconductor device includes: a semiconductor module having a first groove; a Belleville washer having a recess in an outer surface and a protrusion on an inner surface; and a screw passing through the hole of the Belleville washer and the first groove of the semiconductor module to fasten the semiconductor module and an attached body. A head of the screw is accommodated in the recess of the Belleville washer, and at least portion of the protrusion of the Belleville washer is accommodated in the first groove of the semiconductor module.

Semiconductor device

An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.

Semiconductor device including a spring plate

A semiconductor device includes a semiconductor element having an electrode, material of which is first metal, a lead frame through which a plurality of holes extend with an outer contour of the electrode being avoided in a first portion, and having the first portion, material of which is second metal, a bonding layer interposed between the first portion and the electrode, and solder being inside the plurality of holes and adjoining the bonding layer, the solder being thicker than the bonding layer. The plurality of holes have a plurality of first holes extending through the first portion in a thickness direction of the first portion. The bonding layer has a first bonding layer located on the electrode side and being an alloy of the first metal and tin, and a second bonding layer located on the first portion side and being an alloy of the second metal and tin. The plurality of first holes are located in an annular region inside the outer contour of the electrode.

Semiconductor device including a semiconductor element and a lead frame with a plurality of holes

An object is to provide a technique for reducing process steps, and a stress generated at the peripheral portion of the joint portion between an electrode of a semiconductor element and a lead frame. A semiconductor device includes the following: a semiconductor element disposed on a heat spreader; a lead frame joined to an emitter electrode of the semiconductor element via solder, which is a joining material; a metal film disposed on a surface of the emitter electrode; and an anti-oxidation film disposed on a surface of the metal film. The metal film has a peripheral portion that is entirely exposed from the anti-oxidation film.

Semiconductor device, power converter, and method for manufacturing semiconductor device

An object of the present invention is to provide a semiconductor device having a structure in which a resin hardly enters between an insert electrode and a nut at a time of resin sealing. The semiconductor device according to the present invention includes an insert electrode having an insert hole into which a bolt is inserted from outside, a nut which has a screw hole to be screwed with the bolt and is disposed on an inside of the insert electrode so that the screw hole is communicated with the insert hole, at least one semiconductor element being electrically connected to the insert electrode, and a resin sealing the inside of the insert electrode, the nut, and the at least one semiconductor element, wherein a burr is provided on an outer periphery of a direct contact surface of the nut being in direct contact with the insert electrode.

A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.

A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.

According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.

A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.

Resin sealed semiconductor device and manufacturing method therefor

In a circuit having MOS transistors connected in series, a surge voltage that occurs during off periods is reduced, while suppressing an increase in switching loss at turning off of the MOS transistors. When a first power MOSFET ( ) is turned off and then a second power MOSFET ( ) is turned on after that according to predetermined timing, the first power MOSFET ( ) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing. On the other hand, when the second power MOSFET ( ) is turned off and then the first power MOSFET ( ) is turned on after that according to predetermined timing, the second power MOSFET ( ) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing.

Gate drive device for reducing a surge voltage and switching loss

An IGBT ( ) and a diode ( ) are joined onto an element arrangement portion ( ) of a first terminal member ( ) and an element arrangement portion ( ) of a second terminal member ( ) is joined onto the IGBT ( ) and the diode ( ). Further, an IGBT ( ) and a diode ( ) are joined onto the element arrangement portion ( ) of the second terminal member ( ) and an element arrangement portion ( ) of a third terminal member ( ) is joined onto the IGBT ( ) and the diode ( ). A transfer mold package ( ) is so formed as to house the elements ( ). External connection portions ( ) of the terminal members ( ) are drawn out of the package ( ). The element arrangement portion(s) ( ) of the first and/or third terminal member ( ) are/is exposed out of the package ( ).

Power semiconductor device having layered structure of power semiconductor elements and terminal members

A first diode part (,B) for sensing junction temperature and a second diode part (,C) for absorbing static electricity that are included in a semiconductor element (,) for electric power are formed within the same substrate together with a semiconductor element part (,A) for electric power. Moreover, the number of a plurality of second diodes (,CD) constituting the second diode part (,C) is equal to the number of a plurality of first diodes (,BD) constituting the first diode part (,B). In addition, a capacitor (,) for reducing the impedance is disposed between the input terminals of a forward direction voltage fall operating amplifying circuit part (,) of a controlling circuit part (,). Here, it is effective to form an LC low pass filter as well by covering a forward path side relay lead part (,A) and a backward path side relay lead part (,B) with one tubular ferrite core.

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Tokyo, Japan

Takaaki Shirasawa