Central Glass Company, Limited

Takaaki Shibayama

Atsushi Ryokawa

Shuhei Yamada

Shinsuke Nakagawa

Yosuke Nakamura

Takuya Teshima

Tomoyuki Hiraoka

Hisakazu Itoh

Ryokawa Atsushi

Yamada Shuhei

Disclosed is a method for refining trimethylsilane, including the steps of (1) preparing an activated carbon loaded with at least copper (II) oxide and zinc oxide; (2) adsorbing a trimethylsilane onto the activated carbon; and (3) bringing a trimethylsilane containing silane, methylsilane or dimethylsilane as an impurity into contact with the activated carbon finished with the step (2) to remove the impurity from the trimethylsilane by adsorbing the impurity. According to this method, heat generation of the activated carbon is suppressed and impurities such as dimethylsilane, etc. can be removed efficiently.

Method for refining trimethylsilane

To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

Method for production of iodine heptafluoride

A process for producing silicon tetrafluoride includes reacting at 250&deg; C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600&deg; C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400&deg; C. or higher.

Process for producing silicon tetrafluoride

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Ube, Japan

Takaaki Shibayama