Murata Manufacturing Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Takaaki Mizuno

Keiichi Umeda

Yoshimasa Yoshioka

Toshiyuki Nakaiso

Morito Akiyama

Masato Uehara

Yasuhiro Aida

Toshimi Nagase

Kenji Toyoshima

A passive component includes an inorganic substrate having a first main surface and a second main surface, which are opposed to each other, and contains a semiconductor material; and a passive element portion on the first main surface of the inorganic substrate so as to be in contact with the first main surface. When a cross section in a plane that passes through a center of gravity in a whole of the first main surface and is orthogonal to the first main surface is defined as a first cross section, in the first cross section, the inorganic substrate has a first side surface and a second side surface, which are connected with the first main surface and opposed to each other, and each of line roughness of the first side surface and line roughness of the second side surface is larger than line roughness of the first main surface.

Passive component and package component

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.

Gallium nitride structure, piezoelectric element, method of manufacturing piezoelectric element, and resonator using piezoelectric element

A variable capacitance element is provided that includes a plurality of resistance elements that form a path for applying a control voltage to the electrodes of a plurality of variable capacitance portions connected in series. These resistance elements include first distribution resistance elements, second distribution resistance elements, a first shared resistance element, and a second shared resistance element. Moreover, vertical sectional areas of the first shared resistance element and the second shared resistance element with respect to conducting directions thereof are larger than the vertical sectional areas of the first distribution resistance elements and the second distribution resistance elements with respect to conducting directions thereof.

Variable capacitance element

A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAIN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.

Piezoelectric element, piezoelectric microphone, piezoelectric resonator and method for manufacturing piezoelectric element

A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAlN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.

Growing community of inventors

Nagaokakyo, Japan

Takaaki Mizuno