Tokyo Electron Limited

Tohoku University

Ihi Corporation

Zeon Corporation

Takaaki Matsuoka

Tadahiro Ohmi

Masahiro Nakamura

Toshihisa Nozawa

Tetsuya Goto

Kohei Kawamura

Akinobu Teramoto

Atsutoshi Inokuchi

Kiyotaka Ishibashi

Yasuo Kobayashi

Hirokazu Ueda

Hiraku Ishikawa

Masahiro Okesaku

Masaki Hirayama

Tsutomu Hiroki

Yasuyuki Shirai

Teruo Asakawa

Yoshiyuki Kikuchi

Teruyuki Hayashi

Shigeru Ishizawa

Masafumi Kitano

Shigemi Murakawa

Katsuhiko Iwabuchi

Daisuke Abe

Shinji Ide

Kotaro Miyatani

Yuji Ono

Yusuke Ohsawa

Kunitaka Masaki

Masahiro Horigome

Rie Harada

Kenichi Nishizawa

Fumio Matsuzaka

Kohei Watanuki

Yutaka Mizo

Takatoshi Kameshima

Yu Murakami

Takuya Kurotori

Toshiyasu Hori

Shozo Nakayama

Hironori Ito

Yoshinobu Tanaka

Seiji Yasuda

Nagisa Hosoya

Tadahiro c/o Tohoku University Ohmi

Shozo c/o Kabushiki Kaisha Toyota Jidoshokki Nakayama

Hironori c/o Kabushiki Kaisha Toyota Jidoshokki Ito

A welding method of a diffusion bonded structure in which the diffusion bonded structure formed by diffusion bonding metal parts to each other is bonded to another part by fusion welding includes a buffer layer forming step of forming a buffer layer in a welding region including a diffusion bonded joint of the diffusion bonded structure, the buffer layer having greater ductility than the diffusion bonded joint, and a welding step of bonding the welding region in which the buffer layer is formed to the another part by performing the fusion welding from above the buffer layer.

Welding method of diffusion bonded structure

Provided is a high-temperature object observation device including a camera capable of acquiring an image of an observation region adjacent to a heat source and a light shielding device. In the high-temperature object observation device, a light shielding device includes a light shielding part that covers the vicinity of the heat source, a holding object that holds the heat source at a position exposed from the light shielding part, and an actuator that releases engagement of the holding object, and immediately after the light shielding device is brought into operation and the heat source is covered with the light shielding part, the camera acquires an image of the observation region.

High-temperature object observation device

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Magnetron sputtering apparatus

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 &#x3bc;m to 70 &#x3bc;m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 &#x3bc;m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Shower plate sintered integrally with gas release hole member and method for manufacturing the same

A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element

A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100&#xb0; C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

Pattern-forming method and method for manufacturing semiconductor device

A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Surface treatment for a fluorocarbon film

A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Semiconductor device manufacturing method and semiconductor device

A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiOcomposition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Microwave plasma processing apparatus, dielectric window for use in the microwave plasma processing apparatus, and method for manufacturing the dielectric window

Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrateto be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.

Rotary magnet sputtering apparatus

In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1&#xd7;10cmnear a surface of the semiconductor substrate.

Semiconductor device manufacturing method

A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber () of a plasma processing apparatus (). A microwave is supplied into the chamber (), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.

Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device

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Tokyo, Japan

Takaaki Matsuoka