National Institute of Advanced Industrial Science and Technology

The Furukawa Electric Co., Ltd.

Agency of Industrial Science and Technology

Director-general of Agency of Industrial Science and Technology

Takaaki Manabe

Toshiya Kumagai

Tetsuo Tsuchiya

Iwao Yamaguchi

Susumu Mizuta

Mitsugu Sohma

Masakazu Matsui

Tomohiko Nakajima

Kengo Nakao

Norio Matsui

Hajime Kasahara

Naoto Edo

Akira Yabe

Hiroyuki Niino

Akio Watanabe

Wakichi Kondo

Kenichi Tsukada

Susumu Nakamura

Yoji Imai

Tsuyoshi Terayama

Tadao Shimizu

Masami Nishikawa

Wakichi Kondou

A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(BMO) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600&#xb0; C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.

Oriented perovskite oxide thin film

An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.

Oxide superconductor thin film and superconducting fault current limiter

An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.

Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film

Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.

Resistor film for bolometer

Provided is a coating solution where, upon producing a rare-earth superconductive composite metal oxide film by means of a coating-pyrolysis method, cracks are not generated in the heat treatment process for eliminating organic components, even when the thickness of the rare-earth superconductive film produced in a single coating is 500 nm or more, and without having to repeat the coating and annealing process. A solution for producing a rare-earth superconductive film which is made into a homogeneous solution by dissolving, in a solvent formed by adding a polyhydric alcohol to a univalent linear alcohol having a carbon number of 1 to 8 and/or water, a metal complex coordinated, relative to metal ions of a metallic species containing rare-earth elements, barium and copper, with pyridine and/or at least one type of tertiary amine, at least one type of carboxylic acid having a carbon number of 1 to 8, and, as needed, an acetylacetonato group.

Solution for forming rare-earth superconductive film and production method thereof

A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.

Rare earth-Ba-Cu complex composition and method of producing superconductor using same

There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.

Method for producing a metal oxide and method for forming a minute pattern

A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.

Method for preparing dense, epitaxial metal oxide film

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Ibaraki, Japan

Takaaki Manabe