Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Mitsushita Denki Kabushiki Kaisha

Takaaki Kawahara

Mikio Yamamuka

Tsuyoshi Horikawa

Akimasa Yuuki

Masayoshi Tarutani

Tetsuro Makita

Shigeru Matsuno

Takehiko Sato

Koichi A Ono

Teruo Shibano

Tomonori Okudaira

Jiro Yugami

Shinsuke Sakashita

Taisuke Furukawa

Kenyu Haruta

Mutsumi Tsuda

Tatsunori Kaneoka

Kouitirou Tsutahara

Touru Yamaguchi

Akira Yamada

Akihiko Furukawa

Tomohiro Sasagawa

Fusaoki Uchikawa

Akihiro Suzuki

Toshiyuki Oishi

Naohiko Fujino

Noboru Mikami

Masaru Kadoshima

Hitoshi Wakata

Kenichi Kuroda

Hideki Yabe

Junji Tanimura

Tetsuya Takami

Kazuyoshi Kojima

Kazuo Kuramoto

Yoshio Saito

Yukihiko Wada

Kouji Kise

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

Keisuke Nanba

A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode is formed over a semiconductor substrate via an insulating film. The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film. Metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1&#xd7;10to 2&#xd7;10atoms/cm.

Semiconductor device and manufacturing method thereof

To improve productivity and performance of a CMISFET including a high-dielectric-constant gate insulating film and a metal gate electrode. An Hf-containing insulating film for a gate insulating film is formed over the main surface of a semiconductor substrate. A metal nitride film is formed on the insulating film. The metal nitride film in an nMIS formation region where an n-channel MISFET is to be formed is selectively removed by wet etching using a photoresist pattern on the metal nitride films a mask. Then, a threshold adjustment film containing a rare-earth element is formed. The Hf-containing insulating film in the nMIS formation region reacts with the threshold adjustment film by heat treatment. The Hf-containing insulating film in a pMIS formation region where a p-channel MISFET is to be formed does not react with the threshold adjustment film because of the existence of the metal nitride film. Then, after removing the unreacted threshold adjustment film and the metal nitride film, metal gate electrodes are formed in the nMIS formation region and the pMIS formation region.

Manufacturing method of semiconductor device

Provided is a highly reliable semiconductor device equipped with a plurality of semiconductor elements having desired properties, respectively; and a manufacturing method facilitating the manufacture of the semiconductor device. The semiconductor device is manufactured by forming a gate-electrode metal film having a thickness of from 3 to 30 nm over the entire upper surface of a gate insulating film; forming an n-side cap layer having a thickness of 10 nm or less over the entire upper surface of a portion of the gate-electrode metal film belonging to an nFET region by using a material different from that of the gate-electrode metal film; and carrying out heat treatment over the n-side cap layer to diffuse the material of the n-side cap layer into the gate-electrode metal film immediately below the n-side cap layer and react them to form an n-side gate-electrode metal film in a nFET region. A poly-Si layer is then deposited, followed by gate electrode processing.

Semiconductor device and manufacturing method of the same

In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device

A vaporizing chamber is constituted by a vaporizer body and an upper vaporizer cover, and a raw material supply pipe for introducing a liquid raw material into the vaporizing chamber is connected to the upper vaporizer cover. In order to suppress transmission of heat from the vaporizing chambers and to the raw material supply pipe, a heat radiation preventing member is provided on a surface of an external wall of each of the vaporizing chambers and. Consequently, a liquid raw material vaporizer capable of suppressing the generation of a vaporization residue is provided, and a semiconductor device including a CVD film having a stable thickness and a method of manufacturing the semiconductor device are obtained.

Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device

There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.

Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby

A method of forming a (Ba, Sr) TiO high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO thin film is formed on a substrate by CVD reaction using the material gas.

Method of forming high dielectric constant thin film and method of manufacturing semiconductor device

A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.

Vaporizing device for CVD source materials and CVD apparatus employing the same

A method of forming a (Ba, Sr) TiO,high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO,thin film is formed on a substrate by CVD reaction using the material gas.

A CVD apparatus for forming a thin film having a high dielectric constant, which is improved to suppress source precipitation and residue generation and to achieve stable formation of a BST thin film, is provided. The apparatus includes a reaction chamber, a source gas supply tube, and a reactive gas supply tube. A jet element for jetting out the gas along the inner walls of the reaction chamber is provided to at least one of the source gas supply tube and the reactive gas supply tube.

CVD apparatus for forming thin film having high dielectric constant

There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

High dielectric constant thin film structure, method for forming high

An object is to provide a method of monitoring a CVD liquid source for forming a thin film having a high dielectric constant, which allows detection of the concentration abnormality and the deterioration of the CVD liquid source. First, the CVD liquid source used as a sources of chemical vapor deposition is prepared by dissolving an organometallic compound of dipivaloyolmethane type in an organic solvent. Secondly, a spectroscopy of the CVD liquid source is performed.

Method and apparatus for monitoring CVD liquid source for forming thin

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Hyogo, Japan

Takaaki Kawahara