Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Takaaki Kamimura

Hidetoshi Nozaki

Mitsuo Nakajima

Akihiko Furukawa

Akira Kubo

Yoshinori Iida

Masato Hiramatsu

Tetsuya Yamaguchi

Hisanori Ihara

Michio Sasaki

Hideo Kawano

Yoshito Kawakyu

Masahiko Hirose

Mitsuaki Suzuki

Kiyotsugu Mizouchi

Masahiko Machida

Takayoshi Dohi

Tadashi Utagawa

Masayuki Dojo

Shigeyuki Motokawa

Tomoki Miyaji

Kunio Matumura

Nobuya Nagahisa

Tamothu Hatayama

An object of the present invention is to simplify steps for manufacturing a matrix array substrate by reducing the number of masks being necessary to manufacture and to improve yield ratio of the matrix array substrate. According to the present invention, on a glass substrate, scanning lines, signal lines, a first insulated film, a second insulated film, an unprocessed semiconductor film, an unprocessed channel protective film, unprocessed low resistance semiconductor film, and Mo/Al/Mo laminated film are formed. Then, the source electrodes, the drain electrodes, the signal lines, a semiconductor film, and a low resistance semiconductor film are formed at a time by patterning using a common mask pattern. Display pixel electrodes cover upper surfaces of the source electrodes, the drain electrodes, the semiconductor film, the scanning line pads, and the signal line pads. Edge lines of the source electrodes, the low resistance semiconductor film, and the semiconductor film are aligned, and edge lines of the drain electrodes, the low resistance semiconductor film and the semiconductor film are aligned.

Liquid crystal display device, matrix array substrate, and method for manufacturing matrix array substrate

A number of pixel regions surrounded by scanning signal lines and display signal lines are defined on an array substrate of a liquid crystal display element. Formed in each pixel region are a display pixel electrode extending in parallel with the display signal lines and two opposite electrodes provided on both sides of the display pixel electrode and extending in parallel with the display pixel electrode. Each of the two opposite electrodes is provided at a predetermined interval from the display pixel electrode. An end of the display pixel electrode is layered over an opposite signal line, thereby constituting a first supplemental capacity, and another end thereof is electrically connected to a switching element. An end of each opposite electrode is electrically connected to an opposite signal line. The display pixel electrode and the opposite electrodes are formed by processing the same conductive layer as that forming the display signal lines.

Array substrate for liquid crystal display element

The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.

Method of manufacturing active matrix display

A thin-film transistor device comprising a pixel section including a plurality of pixel electrodes arranged in rows and columns on a substrate and a plurality of thin-film transistors of reverse stagger type, connected as switching elements to the pixel electrodes, respectively, and a drive section including a plurality of thin-film transistors of coplanar type, each having a gate insulating film, for driving the thin-film transistors of the reverse stagger type. A lower insulating film is located beneath the thin-film transistors of the reverse stagger type. The lower insulating film and the gate insulating films of the thin-film transistors of the coplanar type are formed of a first insulating film provided on the substrate.

Integrated circuit device having an insulating substrate, and a liquid

A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.

Photo-assisted CVD apparatus

An inverted stagger thin film transistor includes an insulating substrate, a silicon active layer formed thereon, source and drain ohmic contact layers, source and drain electrodes respectively contacting the source and drain ohmic contact layers, and a gate electrode opposite to the channel region of the active layer through a gate insulating film. An auxiliary film consisting of a silicon film doped with nitrogen is formed in the surface of the active layer, and the ohmic contact layers contact the auxiliary film. The auxiliary film can be continuously formed from the active layer to the ohmic contact layers, thereby improving a junction state between the active layer and the ohmic contact layers.

Thin film transistor with nitrogen concentration gradient

A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.

Method of manufacturing solid-state image sensor

A photovoltaic device comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate and comprised of a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure, wherein either the p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side.

Photovoltaic device

Growing community of inventors

Himeji, Japan

Takaaki Kamimura