Japan Display Inc.

Toshiba Matsushita Display Technology Co., Ltd.

Takaaki Kamimura

Noriyuki Hirata

Takaaki Ishikawa

Poh Ling Fu

Eng Soon Lim

Kian Kiat Lim

Kai Pheng Tan

Atsushi Nakamura

According to one embodiment, an organic EL device includes an insulating substrate including a first main surface and a second main surface, a switching element formed on the insulating substrate at the first main surface side, a first electrode electrically connected to the switching element, a second electrode opposed to the first electrode, an organic luminescent layer disposed between the first electrode and the second electrode, a reflective plate disposed between the insulating substrate and the first electrode, and a conductive film covering the second main surface of the insulating substrate.

Organic EL device

Disclosed is a manufacturing apparatus of a light-emitting element including: a main transporting route extending in a first direction, the main transporting route comprising first and second transfer devices connected through a first transporting chamber; a sub-transporting route extending in a second direction intersecting the first direction, the sub-transporting route comprising a second transporting chamber connected to the first or second transfer device and a delivery chamber connected to the second transfer chamber; and a plurality of first treatment chambers connected to the delivery chamber. The main transporting route is configured to transfer a substrate to be treated in a horizontal state, and one of the plurality of treatment chambers is configured to hold the substrate in a vertical state during treatment.

Manufacturing method of a light emitting device

Disclosed is a manufacturing apparatus of a light-emitting element. The manufacturing apparatus includes: a main transporting route including a first transfer device and a second transfer device connected to each other through a first transporting chamber; a sub-transporting route extending in a direction intersecting the main transporting route, the sub-transporting route including: a second transporting chamber connected to the first transfer device or the second transfer device; and a delivery chamber connected to the second transporting chamber; and a plurality of treatment chambers connected to the delivery chamber. A region to which the first transfer device, the second transfer device, the first transporting chamber, and the second transporting chamber are connected is under a continuous vacuum environment.

Manufacturing apparatus of light-emitting element

Manufacturing device and manufacturing method of light-emitting element

According to one embodiment, a substrate for display device includes an insulating substrate and a conductive film formed on at least one main surface of the insulating substrate. As to the substrate in an etching process in which a fluoric acid solution containing 10% or more hydrogen fluoride is used, a first etching rate of the conductive film is substantially the same as a second etching rate of the insulating substrate, or the first etching rate is greater than the second etching rate.

Substrate for display device and method for manufacturing display device

According to one embodiment, a display device includes a first substrate including a first insulating substrate, a second substrate including a second insulating substrate, a light modulation layer, a first electrode of a strip shape extending in a first direction, a plurality of conductive wiring lines extending in a second direction crossing the first direction, configured to selectively transmit a desired polarized light component of incident light, a second electrode configured to optically change the light modulation layer in cooperation with the first electrode, and a detection circuit configured to detect a change in capacitance between the first electrode and the conductive wiring lines.

Display device with a touch sensor

A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3&#xd7;10atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.

Growing community of inventors

Tokyo, Japan

Takaaki Kamimura