Nippon Telegraph and Telephone Corporation

Takaaki Kakitsuka

Hiroyuki Suzuki

Shinji Matsuo

Ryo Nakao

Koji Takeda

Tai Tsuchizawa

Takuma Aihara

Tatsurou Hiraki

Erina Kanno

Nikolaos-Panteleimon Diamantopoulos

Masaya Notomi

Akihiko Shinya

Tatsuro Hiraki

Toru Segawa

Suguru Yamaoka

A device includes a first cladding layer, a waveguide laser, an absorption layer, and a second cladding layer. The absorption layer is constituted by an oversaturation absorption body such as graphene. Also, the absorption layer is provided between the active layer and the distributed Bragg reflection portion. The absorption layer is formed below a core forming an optical waveguide between the active layer and a distributed Bragg reflection portion.

Optical device

A semiconductor laser includes an active region, a first distributed-Bragg-reflector region disposed contiguously with the active region, and a second distributed-Bragg-reflector region. The first distributed-Bragg-reflector region is formed contiguously with one side of the active region in a waveguide direction and includes a first diffraction grating. The second distributed-Bragg-reflector region is formed contiguously with to the other side of the active region in the waveguide direction and includes a second diffraction grating. The first diffraction grating includes recessed portions formed through a diffraction grating layer formed in the first distributed-Bragg-reflector region and convex portions adjacent to the recessed portions. The diffraction grating layer is made of a dielectric material.

Semiconductor laser

A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiO(n is smaller than 2).

Semiconductor optical element

A semiconductor laser includes a distributed feedback active region and two distribution Bragg reflecting mirror regions which are arranged to be continuous with the distributed feedback active region. The distributed feedback active region has an active layer which is composed of a compound semiconductor and a first diffraction grating. The first diffraction grating is composed of a recessed portion which is formed to extend through a diffraction grating layer formed on the active layer and a projection portion which is adjacent to the recessed portion.

A semiconductor optical module includes a semiconductor laser element region having an active layer, a first cladding layer which is formed such that the active layer is embedded therein, a second cladding layer which is formed underneath the active layer and the first cladding layer, and a heater unit which produces a temperature change in a waveguide; an optical waveguide element region including a spot-size converter which converts a spot size of incident laser light, and an optical waveguide core layer which is formed such that the spot-size converter is embedded therein, the first cladding layer contains InP, the second cladding layer is made of a material lower in refractive index and higher in thermal conductivity than the first cladding layer, and a third cladding layer which is made of a material lower in refractive index and lower in thermal conductivity than the second cladding layer is formed underneath the spot-size converter and the heater unit.

Semiconductor optical module

The optical modulator includes a lower cladding layer formed on a substrate, a core formed on the lower cladding layer, and an upper cladding layer formed on the core. The core is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer and upper cladding layer are equal to or less than a refractive index of InP.

Optical modulator

An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an Emode, for example.

A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency.

An inference processing apparatus includes an input data storage unit that stores pieces X of input data, a learned NN storage unit that stores a piece W of weight data of a neural network, a batch processing control unit that sets a batch size on the basis of information on the pieces X of input data, a memory control unit that reads out, from the input data storage unit, the pieces X of input data corresponding to the set batch size, and an inference operation unit that batch-processes operation in the neural network using, as input, the pieces X of input data corresponding to the batch size and the piece W of weight data and infers a feature of the pieces X of input data.

Waveform equalization device

A semiconductor optical device that achieves both of heat dissipation and light confinement and permits efficient current injection or application of an electric field is implemented. The semiconductor optical device includes: a core layer including an active region () made of a compound semiconductor; two cladding layers () injecting current into the core layer; and a third cladding layer () made of a material having a larger thermal conductivity, a smaller refractive index, and a larger band gap than a material for any of the core layer and the two cladding layers.

Semiconductor optical device

The objective of the invention is to provide a photonic crystal device which enables efficient confinement of carriers while preventing the deterioration of device characteristics. Specifically a photonic crystal device has a photonic crystal in which media with different refractive indexes are regularly arranged, wherein an active region () includes an active layer () and carrier confinement layers () provided on the top and bottom of the active layer () respectively for confining carriers. The photonic crystal is formed by a buried growth layer () with a larger bandgap than that of the active region ().

Photonic crystal device

There is provided an optical modulation signal generating device in which an operation speed is not limited by a relaxation oscillation frequency of a laser, and high-speed modulation and long-distance transmission can be performed. The optical modulation signal generating device converts a signal from a signal source into an optical signal and outputs the optical signal to a transmission medium having frequency dispersion. The optical modulation signal generating device includes an optical source () for performing frequency modulation by the signal from the signal source to generate an optical signal having only a frequency modulation component, and a frequency filter () for converting the frequency modulation component of the optical signal into an intensity modulation component and a frequency modulation component.

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Atsugi, Japan

Takaaki Kakitsuka