Toshiba Kikai Kabushiki Kaisha

Toshiba Ceramics Co., Ltd.

Kabushiki Kaisha Toshiba

Toshiba Machine Co., Ltd.

Other

Toshiba Kikai Co., Ltd.

Takaaki Honda

Shinichi Mitani

Tadashi Ohashi

Katsuyuki Iwata

Yuusuke Sato

Toshimitsu Ohmine

Ping Xin

Katuhiro Chaki

Tatsuo Fujii

Kunihiko Suzuki

Hiroyuki Saito

Hideki Ito

Eiichi Toya

Hideki Arai

Masahiko Ichishima

Shuji Tobashi

Yoshinori Nakagawa

Masaki Shimada

Hidenori Takahashi

Shyuji Tobashi

Hirofumi Katsumata

Keiiti Akagawa

Takehiko Kobayashi

Yoshitaka Murofushi

A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

Method and apparatus for controlling rise and fall of temperature in semiconductor substrates

The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbon piece. The piece is then machined into a predetermined shape. Subsequently, the surface of the piece resulted after machining, is impregnated with the resin. Further, the resin-impregnated piece is baked so as to transform the impregnated resin into glassy carbon.

Process for manufacturing a product of glassy carbon

A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

Vapor deposition apparatus and vapor deposition method

There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

High-speed rotational vapor deposition apparatus and high-speed

A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.

Vapor deposition apparatus and method for forming thin film

This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer with an in-plane temperature distribution of 2 to 50.degree. C., and includes the steps of arranging the silicon wafer in a reaction vessel, supplying into the reaction vessel a source gas containing (a) silane, (b) 5 to 600 vol % of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer by setting a vacuum degree of 10 to 200 torr in the reaction vessel and heating the wafer to 900 to 1100.degree. C.

Epitaxial growth method

A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

Substrate processing apparatus and substrate processing method

A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.

Vapor phase growth apparatus

A heating device has a plurality of strip heating portions separated by a plurality of slits. The strip heating portions are connected to one another by connecting portions, thereby forming a heating surface in which a zigzag current path extends. The connecting portions in which uneven-temperature regions exist are bent so as not to be positioned in the same plane as the heating surface, thereby making the heating surface, to be opposed to an object to be heated, to have a uniform temperature.

Zigzag heating device with downward directed connecting portions

In a multichamber type sheet-after-sheet type of treating apparatus, there are provided an inlet/outlet port capable of independently control pressure and atmosphere in the port, a platform connected to the inlet/outlet port, a plurality of treating chambers connected to the platform, at least two supporting members in the inlet/outlet port for supporting a material to be treated, a hand formed in the platform for supporting the material, and a device for horizontally swinging the hand. In operation, the materials to be treated are treated in the treating chambers at different times, a treated material and a not yet treated material are exchanged between the inlet/outlet port and surrounding air, and one of treating chambers and the platform are interconnected after completion of the treatment for exchanging a treated material and a not yet treated material.

Method for multichamber sheet-after-sheet type treatment

An exhaust processing apparatus comprises a cracking furnace for cracking and solidifying exhaust discharged from a reactor for forming crystals on a semiconductor substrate, a first collecting device for collecting relatively large components solidified in the cracking furnace, a second collecting device for collecting relatively small solidified components passed through the first collecting device, and a chemical or a physical adsorbing member for chemically or physically adsorbing the exhaust passed through the first and second collecting devices. The apparatus may be provided with bypass piping for bypassing a particular section of the apparatus, a shutoff member for opening and closing the bypass piping and a control device for controlling the shutoff member. The cracking furnace of the apparatus has a heating portion for heating the exhaust, an enlarged portion disposed downstream the heating portion and having a passage whose cross-sectional area is larger than that of the heating portion, and a cooling mechanism for forcibly cooling the heated exhaust.

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Mishima, Japan

Takaaki Honda