Mitsubishi Denki Kabushiki Kaisha

Taiyo Sanso Co., Ltd.

Japan Organo Co., Ltd.

Other

Shin-Etsu Chemical Co., Ltd.

Nippon Rensui Co.

Taiyo Sanso Kabushiki Kaisha

Dan Science Co., Ltd.

Tsiyo Sanso Co., Ltd.

Liquid Concerned Ltd.

Zeotec Lrc Corporation

Shin-Etsu Chemical Ltd., Co.

Mitsubishi Denki Kabushiki Kaisha Lsi Development Laboratory

Takaaki Fukumoto

Toshiaki Ohmori

Masaharu Hama

Motonori Yanagi

Masuo Tada

Cozy Ban

Itaru Kanno

Toshio Shiobara

Kazutoshi Tomiyoshi

Eiichi Asano

Nobuyoshi Hattori

Yasukazu Mukogawa

Noriaki Higuchi

Takeki Hata

Hiroshi Yanome

Toshiki Manabe

Katsuhiko Tamura

Hakushi Shibuya

Kazuhiko Kawada

Hitoshi Nagafune

Koji Ezaki

Shinpei Kayano

Shinichi Sato

Tsutomu Sasaki

Hideaki Arima

Tadashi Nishimura

Yoshihiro Hirata

Masahiro Yoneda

Hiroshi Harada

Keisuke Namba

Hideo Kotani

Fumio Itoh

Hirozo Takano

Norio Yamazaki

Tadashi Hyono

Nobuyoshi Terada

Masashi Mizuno

Akiko Hisasue

Yasuo Kamimura

Katsuhikoa Tamura

Noboru Inoue

Kimihiko Okaue

Ikuhisa Kanoh

Tutomu Sasaki

Kazuhiko Akamatsu

Isao Kubota

Yutaka Funada

Toshiaki Kawaguchi

Shinichi Satou

Akemi Nagae

Hiroi Takahiko

Shinji Endo

Hitoshi Miyamaru

Miki Tsukaguchi

Super clean air having therein chemical components&mdash;such as hydrocarbons, organic halogens, acidic gases, basic gases, aldehydes, nitrogen oxides, and H,O (that is, all components other than oxygen, nitrogen, and noble gases&mdash;the types of chemical components differ depending on the source of the air)&mdash;in concentrations no more than 1 ppb and a dew point lower than &minus;40&deg; C., is obtained from the atmosphere by low-temperature adsorption treatment in stages at temperatures ranging from &minus;40&deg; C. to &minus;180&deg; C. Material air collected from the atmosphere is pretreated in a room-temperature adsorption step to remove moisture and carbon dioxide. The pretreated air is then low-temperature adsorption treated by absorbents in a plurality of steps to adsorb the gaseous chemical components, the treatment temperature being lower in each succeeding step. Treatment at &minus;40&deg; C. may remove, for example, HF, SO,, and/or NH,. Treatment at &minus;100&deg; C. may remove, for example, SF,, C,F,, H,S, and/or N,O. Treatment at &minus;150&deg; C. may remove, for example, CF,, NO, CH,, and/or CO. The last treatment step produces super clean air suitable for use in processing semiconductor wafers.

Method for producing super clean air

By removing a fraction of fine particles having a particle size of less than 2 &mgr;m from starting inorganic filler particles having a mean particle size of 10-50 mm and adding thereto particles having a mean particle size of 0.1-2 &mgr;m and a specific surface area of 3-10 m,/g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 &mgr;m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

Inorganic filler, epoxy resin composition, and semiconductor device

In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt % of a particulate inorganic filler, fine particles having a particle size of less than 3 .mu.m account for 10-40 wt % of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m.sup.2 /g as measured by a nitrogen adsorption BET method. The inorganic filler satisfies that when a blend of a bisphenol F type liquid epoxy resin having a viscosity of 30-45 poises at 25.degree. C. as measured by Gardner-Holdt method with 75 wt % of the inorganic filler is measured for viscosity at 25.degree. C. by means of an E type viscometer, the viscosity at a shear rate of 0.6 s.sub.-1 is less than 50,000 poises and the ratio of the viscosity at a shear rate of 0.6 s.sup.-1 to the viscosity at a share rate of 10 s.sup.-1 is less than 2.5/1. The epoxy resin composition has a low melt viscosity enough to mold on semiconductor devices without die pad and wire deformation.

Epoxy resin composition and semiconductor device encapsulated therewith

By removing a fraction of fine particles having a particle size of less than 2 .mu.m from starting inorganic filler particles having a mean particle size of 10-50 .mu.m and adding thereto particles having a mean particle size of 0.1-2 .mu.m and a specific surface area of 3-10 m.sup.2 /g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 .mu.m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.

A clean dry air generating unit that includes a fan filter unit and a dry air generating apparatus arranged within a chamber of closed construction. The fan filter unit includes an open air introducing fan, a chemical filter, and a HEPA filter. The chamber of closed construction is supplied air through the fan filter unit which is then supplied to the dry air generating apparatus. Clean dry air is fed from the generating unit to an area outside of the chamber or can be reintroduced to the generating unit. The apparatus can continuously supply clean dry air at a lower cost.

Apparatus for generating chemical-free dry air

Apparatus comprising an outside-air conditioner 2, an operation zone 4, a ceiling filter 8 such as an HEPA or ULPA filter, a fan filter unit 9 comprising a chemical filter and a draft fan arranged only on an overhead carrying apparatus 5 and storing apparatus 6 arranged in the operation zone 4 in a clean room 1 chemical mist causing chemical contamination is removed to the carrying apparatus 5 and storing apparatus 6.

Clean room having an air conditioning system

A method for producing pure water is provided which reduces non-ionic silica in pure or ultrapure water. With the method, non-ionic silica which is contained in water is brought into contact with ozone having a concentration of at least 1 ppm for at least 20 minutes to react therewith and, simultaneously with or after this reaction process, irradiated with ultraviolet rays to undergo ionization and passed through an anion exchange column. The processed water passed through this ion exchange resin column contains practically no non-ionic silica.

Method for producing pure water

An apparatus for producing pure water is provided which includes means for ionizing non-ionic silica which is contained in water comprising a vessel for allowing the water to pass therethrough and stay therein for predetermined lengths of time; means for dissolving ozone in the water in this vessel; means for irradiating the water in which ozone has been dissolved with ultraviolet rays; means for separating gases from liquids located between the means for dissolving ozone and the means for irradiating water; and means for fixing ionized silica in the water to a solid electrolyte by ion exchange.

Apparatus for producing pure water

In an aeration apparatus and method for producing ultrapure water, a device for vigorously mixing an aeration gas with untreated water is attached to a water pipe through which the water is fed to a reaction tank. The device vigorously mixes the aeration gas with the untreated water in the water pipe before the water reaches the reaction tank. The reaction tank can be smaller, an aeration system for producing ultrapure water can be simpler, and the efficiency of the aeration system can be improved.

Aeration apparatus for producing ultrapure water

The present invention provides a wet-processing apparatus comprising a chamber having a working space, means for wet processing in the working space, means for supplying nitrogen gas in fluid communication with the chamber, a nitrogen gas outlet located in a wall of the chamber, means for cleaning nitrogen gas by removing contaminants mixed therewith located in an area of the chamber downstream of the working space and upstream of the nitrogen gas outlet and having a contaminated gas inlet and a treated gas outlet in fluid communication with the chamber, means for diverting gas in the chamber located downstream of the treated gas outlet and upstream of the nitrogen gas supplying means, the means for diverting gas having a first position providing egress of treated gas from the chamber through the nitrogen gas outlet while inhibiting fluid communication to other parts of the chamber and a second position permitting fluid communication and recirculation of the treated gas to other parts of the chamber while preventing egress of the treated gas through the nitrogen gas outlet, and means for circulating nitrogen gas in the chamber.

Wet-process apparatus

In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.

Apparatus for treating the surface of a semiconductor substrate

A novel and improved polishing apparatus is disclosed which employs ice particles as an abrasive material, the hardness of which can be changed so as to match that of an article being polished for performing polishing operation in a most efficient manner without impairing or marring the polished surface of the article. To this end, the polishing apparatus includes a freezing vessel defining therein an ice particle producing chamber, a coolant supply nozzle mounted on the freezing vessel and connected with a coolant source through a coolant supply line for spraying a coolant into the ice particle producing chamber to form a freezing atmosphere, a liquid supply nozzle mounted on the freezing vessel and connected with a liquid supply for spraying a liquid into the ice particle producing chamber so that the liquid thus sprayed is cooled and freezed by the freezing atmosphere to produce superfine ice particles, a particle hardness adjuster for adjusting the hardness of the ice particles to be produced so as to match the hardness of an article being polished, and an injection nozzle for injecting the ice particles towards a surface of the article for polishing thereof. Preferably, the particle hardness adjuster comprises a flow control valve which is disposed on the coolant supply line between the coolant supply nozzle and the coolant source for adjusting and changing the amount of coolant sprayed therefrom into the ice particle producing chamber so as to control the temperature therein.

Apparatus for polishing an article with frozen particles

In an apparatus and method for purifying water, an oxidation forcibly turns colloidal substances into fine particles of oxides, thus increasing the size of the particles. The effluent of oxidation process is treated by ion exchange process, and then treated by membrane process. Because of the increased size of the particles, they are easily removed in the subsequent ion exchange process. The membrane process is thereby prevented from clogging up, and then removes fine particles that cannot be removed by the ion exchange process. Colloidal substances are thus removed effectively from raw water.

Apparatus and method for purifying water

An apparatus for producing ultrapure water includes a cation exchange resin tower, a decarbonation tower, an anion exchange resin tower, and a pH adjustor for changing the zeta potential of the impurities contained in water. The pH value is adjusted to aggregate or ionize the impurities. The apparatus can be controlled so that the treated water is introduced into a reverse osmosis unit or an oxidation tower and an after reverse osmosis unit according to the quality of the treated water.

Apparatus and method for producing ultrapure water and method of

A device for and a method of producing hyperfine frozen particles reduces the quantity of impurity particles in the hyperfine frozen particles produced and stabilizes the generation of hyperfine frozen particles. A hopper includes a heat exchanger through which a coolant, such as nitrogen gas or liquid nitrogen, is circulated. A nitrogen gas inlet through which low temperature nitrogen gas as a coolant is supplied includes a filter to produce a laminar flow of the gas.

Device for and method of producing hyperfine frozen particles

Growing community of inventors

Itami, Japan

Takaaki Fukumoto