Memc Electronic Materials, Inc.

Takaaki Aoshima

Mohsen Banan

Hiroyo Haga

The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.

Nitrogen-doped silicon substantially free of oxidation induced stacking faults

A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.

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Utsunomiya, Japan

Takaaki Aoshima