Sony Corporation

Takaaki Ami

Masayuki Suzuki

Naomi Nagasawa

Akio Machida

Katsuyuki Hironaka

Chiharu Isobe

Yuichi Ishida

Katsunori Yanashima

Takao Miyajima

Shigetaka Tomiya

Akira Ohmae

Michinori Shiomi

Masataka Sugiyama

Hironobu Narui

Yuji Ikeda

Tomonori Hino

Noriyuki Futagawa

Izuho Hatada

Yuuji Hiramatsu

Nobukata Okano

Teiichiro Nishimura

Koji Watanabe

Yuki Maeda

Takashi Tange

Atsushi Yasuda

Nobutaka Okano

Christian Gutleben

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

Method for growing a nitride-based III-V Group compound semiconductor

Method for growing a nitride-based III-V group compound semiconductor

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode

In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrOfilm, an Ir film, an amorphous film, and a Pt film&#x2014;are sequentially made on an Si substrate. The SBT film may comprise Bi, Sr, Taand O, where the atomic ratio may be within the range of 0&#x2266;Sr/Ti&#x2266;1.0, 0&#x2266;Ba/Ti&#x2266;1.0. The Pt film, the amorphous film, the Ir film, and the IrOfilm formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(CH), Bi(o-CH), Bi(O&#x2014;CH), Bi(O&#x2014;iCH), Bi(O-tCH), Bi(O-tCH), Sr(THD), Sr(THD)tetraglyme, Sr(MeC). 2THF, Ti(i-OCH), TiO(THD), Ti(TD)(i-OCH), Ta(i-OCH), Ta(iOCH)THD, Nb(i-OCH), Nb(i-OCH)THD.

Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method

An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2&#xd7;1, 1&#xd7;2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeOfilm, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory

An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2&times;1, 1&times;2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

Crystal growth method of an oxide and multi-layered structure of oxides

An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2&times;1, 1&times;2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

CRYSTAL GROWTH METHOD OF OXIDE, CERIUM OXIDE, PROMETHIUM OXIDE, MULTI-LAYERED STRUCTURE OF OXIDES, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD OF FERROELECTRIC NON-VOLATILE MEMORY AND FERROELECTRIC NON-VOLATILE MEMORY

A driving system using an intercalation substance as a novel mechanochemical system includes an actuator using the intercalation substance and driven by exchange of solutions or by changing concentration of a solution, and a solution supplier that supplies the actuator with the driving solution or solutions. The actuator is composed of one or more cylindrical or fiber-shaped elements each extending in the expanding and contracting direction of the intercalation substance, or one or more film-shaped or plate-shaped elements each having a major surface extending vertically of the expanding and contracting direction of the intercalation substance. The driving system is used as artificial muscle, for example.

Driving system and actuator

In a process for manufacturing a dielectric capacitor, an IrO film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise Bi Sr Ta O , where the atomic composition ratio maybe within the range of 0&lE;Sr/Ti&lE;1.0, 0&lE;Ba/Ti&lE;1.0. The Pt film, the amorphous film, the Ir film, and the IrO film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C H ) , Bi(o-C H ) , Bi(O-C H ) , Bi(O-iC H ) , Bi(O- tC H ) , Bi(O-tC H ) , Sr(THD) , Sr(THD) tetraglyme, Sr(Me C ) &middot;2THF, Ti(i-OC H ) , TiO(THD) , Ti(THD) (i-OC H ) , Ta(i-OC H ) , Ta(iOC H ) THD, Nb(i-OC H ) , Nb(i- OC H ) THD.

A solid-state displacement element includes an inorganic layered compound having a layered structure and an organic substance inserted between layers of the inorganic layered compound. The solid-state displacement element expands or contracts in the lamination direction of the inorganic layered compound when irradiated with controlling light. An optical element and an interference filter using the same principle of expansion or contraction as that in the solid-state displacement element are also disclosed.

Solid-state displacement element, optical element, and interference filter

A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi,SrTa,O,.

Method of producing bismuth layered compound

A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400&deg; C. for several ten minutes by a self-flux method using Bi,O,as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi,Me,R,O,where a, b, and c are values in ranges of 0<a<2, 0<b&lE;0.4, and &minus;0.3&lE;c&lE;1.4. The layer-structured oxide exhibits a paraelectric characteristic or a ferroelectric characteristic at a composition in a specific range out of the stoichiometric composition.

Layer-structured oxide and process of producing the same

A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2&plusmn;0.17)/(m&minus;1) including the stoichiometric composition ratio 2/(m&minus;1), where m is an integer from, and including, 2 to 5.

Layer crystal structure oxide, production method thereof and memory element using the same

It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

Growing community of inventors

Kanagawa, Japan

Takaaki Ami