Samsung Electronics Co., Ltd.

The Industry & Academic Cooperation in Chungnam National University (Iac)

Industry-University Cooperation Foundation Hanyang University

The Industry & Academic Cooperation in Chungnam National University

Tak Hyung Lee

Jong Pal Kim

Jong Wook Lee

Jin Woo Choi

Sang Yun Park

Jae Min Kang

Youn Ho Kim

Chang Mok Choi

Youngwoo Kim

Yong Joo Kwon

Jong Hoon Park

Byung Hoon Ko

Yun Ki Lee

Byoung Il Lee

Ji Mo Gu

Seung Woo Noh

Jun Ho Cha

Hyoung Ho Ko

Yu Jin Seo

Su Bin Kang

Kun Soo Shin

Kun Sun Eom

Hyun Seok Moon

Myoung Hoon Jung

JungMin Lee

Sung Mo Ahn

Hyun Mog Park

Kyeong Jin Park

Dawoon Jeong

Hyun-Mog Park

Jeong Eun Hwang

Ho Jun Chang

Jeongjin Roh

Yeong Sook Chae

Danbi Choi

Byoung-Il Lee

Ji-Mo Gu

Jun-Ho Cha

Sang-Jun Hong

Youngjae Jung

Quanzhen Duan

Eun Ju Yeom

An apparatus for estimating blood pressure includes: a sensor, and a processor configured to estimate blood pressure based on a PPG signal and a contact pressure signal measured by the sensor. The sensor includes: a transparent elastic body; a first polarizing film provided on a surface of the transparent elastic body and configured to come into contact with the object; a light source provided under the transparent elastic body and configured to emit light toward the object; a first detector and a second detector provided under the transparent elastic body and configured to detect light, passing through the first polarizing film after being emitted by the light source and scattered or reflected from the object, to measure the PPG signal; and a second detector provided under the transparent elastic body and configured to detect light, not passing through the first polarizing film, to measure the contact pressure signal.

Apparatus and method for estimating blood pressure, and sensor for estimating the same

Provided i an apparatus configured to estimate an optical-based force, the apparatus including a main body, a cover disposed at a first side of the main body and configured to contact an object, a support part connected to two sides of the cover, supporting the cover, and protruding toward an inside of the main body, and an optical sensor disposed on the support part, the optical sensor including a light source configured to emit light onto a reflector, a detector configured to detect light reflected from the reflector, and a circuit unit configured to estimate a contact force of the object based on the detected light.

Apparatus and method for estimating optical-based force

An apparatus for measuring bio-information includes: a light source including a first light emitter that emits first light of a first wavelength, and a second light emitter that emits second light of a second wavelength; an image sensor including a first pixel region including first pixels that detect the first light reacted with an object, and a second pixel region including second pixels that detect the second light reacted with the object; a light source controller that controls the first light emitter to emit the first light of the first wavelength when a first light exposure operation is performed on the first pixels, and controls the second light emitter to emit the second light of the second wavelength when a second light exposure operation is performed on the second pixels; and a processor that obtains a bio-signal of the object from data detected by the image sensor.

Apparatus for measuring bio-information, and electronic device including the same

An apparatus for estimating bio-information, may include: a main body; a photoplethysmogram (PPG) sensor disposed in the main body and configured to measure a PPG signal from an object of a user; an internal pressure sensor disposed in a closed space formed in the main body, and configured to measure a pressure applied to the closed space when the object applies force to a surface of the main body; and a processor configured to estimate the bio-information of the user based on the PPG signal and the pressure applied to the closed space.

Apparatus and method for estimating bio-information

An apparatus for estimating bio-information, may include: a sensor part having a photoplethysmography (PPG) sensor configured to measure a PPG signal from an object of a user, and a force sensor configured to measure a contact force between the object and the PPG sensor; an output interface, which before the PPG signal is measured, is configured to output first guide information indicating a predetermined number of times the user is required to touch the sensor part, and second guide information indicating a number of times that the sensor part has been touched since the first guide information is output; and a processor configured to estimate bio-information of the user by using the PPG signal based on the number of times that the sensor has been touched since the first guide information is output, corresponding to the predetermined number of times the user is required to touch.

An apparatus for estimating biological information may include a sensor configured to detect a first light signal and a second light signal from an object of a user and a processor configured to determine whether a condition for estimating biological information is satisfied based on the detected first light signal and estimate biological information based on the second light signal, wherein the sensor includes a force sensor configured to measure a force applied to the object when the object is in contact with a cover surface of the sensor.

Apparatus for estimating biological-information and sensor for measuring multi-signal

An apparatus for measuring bio-signals is provided. According to an example embodiment, the apparatus for measuring bio-signals includes: a light source configured to emit light onto an object; an image sensor including: a pixel array configured to detect the light emitted by the light source and reacted by the object and a pixel binning unit configured to bin data of the light, detected by the pixel array, by using at least two different binning sizes; and a processor configured to acquire a plurality of bio-signals respectively based on data of the at least two different binning sizes, which are output from the image sensor.

Apparatus and method for measuring multiple bio-signals using image sensor based on different binning sizes

A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.

Semiconductor devices

An assembly for measuring bio-information includes a finger contact interface configured to move based on a contact force applied by a finger of a user to the finger contact interface; a bio-sensor configured to measure the bio-information of the user based on the finger being in contact with the finger contact interface; a force sensor configured to measure the contact force of the finger applied to the finger contact interface; and a support configured to guide movement of the finger contact interface and support the force sensor against the finger contact interface.

Assembly for measuring bio-information

A vertical memory device includes gate electrodes spaced apart from each other in a first direction. Each of the gate electrodes extends in a second direction. Insulation patterns extend in the second direction between adjacent gate electrodes. A channel structure extends in the first direction. The channel structure extends through at least a portion of the gate electrode structure and at least a portion of the insulation pattern structure. The gate electrode structure includes at least one first gate electrode and a plurality of second gate electrodes sequentially stacked in the first direction on the substrate. Lower and upper surfaces of a first insulation pattern are bent away from the upper surface of the substrate along the first direction. A sidewall connecting the lower and upper surfaces of the first insulation pattern is slanted with respect to the upper surface of the substrate.

Vertical memory device

A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.

Vertical-type memory device

A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of gate electrodes. The semiconductor device further includes a first structure disposed on the substrate and passing through the stacked structure, and a second structure disposed on the substrate. The second structure is disposed outside of the stacked structure, faces the first structure, and is spaced apart from the first structure. The first structure includes a plurality of separation lines passing through at least a portion of the plurality of gate electrodes and extending outside of the stacked structure, and the second structure is formed of the same material as the first structure.

Semiconductor device including separation lines

A semiconductor device includes first gate electrodes including a first lower electrode, a first upper electrode disposed above the first lower electrode and including a first pad region, and one or more first intermediate electrodes disposed between the first lower electrode and the first upper electrode. Second gate electrodes include a second lower electrode, a second upper electrode disposed above the second lower electrode, and one or more second intermediate electrodes disposed between the second lower electrode and the second upper electrode. The second gate electrodes are sequentially stacked above the first upper electrode, while exposing the first pad region. The first lower electrode extends by a first length, further than the first upper electrode, in a first direction. The second lower electrode extends by a second length, different from the first length, further than the second upper electrode, in the first direction.

Semiconductor device including gates

A semiconductor device includes a substrate having first and second regions, a gate electrode stack having a plurality of gate electrodes vertically stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate in the first region, and extending to have different lengths in a second direction parallel to the upper surface of the substrate from the first region to the second region, first and second isolation regions extending in the second direction perpendicular to the first direction, while penetrating through the gate electrode stack on the substrate, in the first and second regions, string isolation regions disposed between the first and second isolation regions in the first region, and extending in the second direction while penetrating through a portion of the gate electrode stack, and a plurality of auxiliary isolation regions disposed linearly with the string isolation regions in at least one of the first and second regions, and spaced apart from each other in the second direction.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Tak Hyung Lee