Sony Corporation

Sony Semiconductor Solutions Corporation

Taizo Takachi

Satoru Wakiyama

Yuichi Yamamoto

Naoki Komai

Masaya Nagata

Masanari Yamaguchi

Takashi Oinoue

Yuki Ikebe

Shunsuke Furuse

Kensaku Maeda

Yasushi Maruyama

Yoichi Ootsuka

Tadashi Iijima

Masaki Haneda

Yutaka Ooka

Suguru Saito

Kaori Takimoto

Hiroaki Yukawa

Hirotaka Yoshioka

The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.

Backside illumination type solid-state imaging device, manufacturing method for backside illumination type solid-state imaging device, imaging apparatus and electronic equipment

A backside-illumination solid-state image pickup apparatus and a backside-illumination solid-state image-pickup-apparatus manufacturing method, an image pickup apparatus, and electronic equipment that are configured to make it possible to reduce manufacturing costs. A diced memory circuit and logic circuit are laid out in a horizontal direction, are embedded and flattened by using an oxide film, and are stacked so as to be enclosed in a plane direction under a solid-state image pickup element. The present disclosure can be applied to an image pickup apparatus.

Backside-illumination solid-state image pickup apparatus, image pickup apparatus, and electronic equipment including embedment members

Picture quality deterioration is curbed. A solid-state imaging device according to an embodiment includes: a semiconductor substrate () including a light-receiving element; an on-chip lens () disposed on a first surface of the semiconductor substrate; a resin layer () covering the on-chip lens; and a glass substrate () disposed on the side of the first surface of the semiconductor substrate separately from the resin layer.

Solid-state imaging device and electronic apparatus for curbing deterioration of picture quality

There is provided semiconductor devices and methods of forming the same, including: a first substrate; and a second substrate adjacent to the first substrate, where a side wall of the second substrate includes one or more diced portions that can include a blade diced portion and a stealth diced portion; and also imaging devices and methods of forming the same, including: a first substrate; a transparent layer; an adhesive layer between the first substrate and the transparent layer; a second substrate, where the first substrate is disposed between the adhesive layer and the second substrate; and a groove extending from the adhesive layer to the second substrate, where the groove is filled with the adhesive layer.

Imaging device, manufacturing method, and substrate dividing method

The present technology relates to an image sensor, a manufacturing method and an electronic device capable of preventing a ghost. In the image sensor, a plate-like transparent member larger than a sensor chip in size is affixed to a side of a pixel array unit of the sensor chip having the pixel array unit in which pixels that perform photoelectric conversion are arrayed. The present technology can be applied to a case of capturing an image by receiving light, regardless of whether the light is visible light or not.

Image sensor, manufacturing method, and electronic device

An imaging method and an imaging apparatus. In one embodiment, the imaging apparatus includes a lens unit, at least three image sensors, and a light-splitting unit. The lens unit focuses light. The at least three image sensors perform photoelectric conversion. The light-splitting unit splits the light from the lens unit into at least three light branches, and guides each one the at least three light branches to a corresponding one of the at least three image sensors.

Imaging apparatus, imaging method, image generation apparatus, image generation method, and program

A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Semiconductor device, manufacturing method, and electronic apparatus

A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.

Imaging device

Imaging device and method of manufacturing the same and electronic apparatus

An image pickup device and a method of the same are described herein. By way of first example, the image pickup device includes a seal member having a first surface, the first surface of the seal member including a concave portion, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member. By way of a second example, the image pickup device includes a seal member having a first surface, the first surface being a polished surface, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member.

Image pickup unit and method of manufacturing the same

There is provided a semiconductor device including a semiconductor layer, a protective layer including a transparent material, and a transparent resin layer that seals a gap between the semiconductor layer and the protective layer. A chip prevention member with a higher Young's modulus than the transparent resin layer is formed to come into contact with the semiconductor layer in a dicing portion of a layer structure before fragmentation, and dicing is performed in the dicing portion for the fragmentation.

Growing community of inventors

Kanagawa, Japan

Taizo Takachi