Showa Denko Kabushiki Kaisha

Taizo Ito

Yasuyuki Sakaguchi

Hideki Hayashida

Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging containersuch that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamberhousing therein a substrateand a layer comprising a GaN-type compound started from this ammonia is formed on the substrate

Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor

Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber housing therein a substrate , and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate

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Kanagawa, Japan

Taizo Ito