Nippon Steel Sumitomo Metal Corporation

Nippon Steel Corporation

Showa Denko K.k.

Taizo Hoshino

Tatsuo Fujimoto

Masashi Nakabayashi

Hirokatsu Yashiro

Masakazu Katsuno

Hiroshi Tsuge

Takashi Aigo

Kohei Tatsumi

Noboru Ohtani

Housei Hirano

Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T) and a set growth temperature (T) which are respectively lower and higher than a growth temperature (T) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same

Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1&#xb0; to 6&#xb0;. The epitaxial film is grown by repeating a dope layer that is 0.5 &#x3bc;m or less and a non-dope layer that is 0.1 &#x3bc;m or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.

Epitaxial silicon carbide single crystal substrate and process for producing the same

The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 &#x3bc;m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm.

SiC single-crystal substrate and method of producing SiC single-crystal substrate

Growing community of inventors

Tokyo, Japan

Taizo Hoshino