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Shinko Seiki Company, Limited

Taizo Hagihara

Tatsuya Takeuchi

Yasuhide Ohno

Keisuke Taniguchi

To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes () and bump electrodes () on the lead-out electrodes () of a semiconductor chip () and surfaces of lead-out electrodes () of an intermediate substrate (), and, after that, the bump electrodes () of the semiconductor chip () and the lead-out electrodes () of the intermediate substrate () are aligned with each other. After that, a pressure is applied to bond the bump electrodes () and the lead-out electrodes ().

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Kobe, Japan

Taizo Hagihara