National Institute of Advanced Industrial Science and Technology

Hitachi-kokusai Electric Inc.

Other

Sony Corporation

Sanyo Electric Co., Ltd.

Daikin Industries, Ltd.

Asahi Glass Company, Limited

Ulvac, Inc.

Fujitsu Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Showa Denko K.k.

Taisuke Yonemura

Yutaka Ohira

Yuki Mitsui

Akira Sekiya

Katsuya Fukae

Katsuo Sakai

Kenji Kameda

Hitoshi Murata

Kaoru Abe

Ginjiro Tomizawa

Seiji Okura

Etsuo Wani

Masaji Sakamura

Takashi Tanioka

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

The present invention provides processes and equipments for safely and easily preparing an F-containing gas, as well as processes and equipments for surface modification using the F-containing gas prepared. According to the present invention, a gas containing a fluoro compound that is easier to handle than Fis supplied and the fluoro compound is excited and decomposed to convert it into Fgas before surface modification and then used for surface modification. According to the present invention, there is no necessity of providing, storing and transporting a large amount of Fgas in advance because a necessary amount of Fgas is obtained immediately before surface modification. A process for preparing an F-containing gas comprises the steps of exciting at least one fluoro compound in a fluoro compound-containing gas by conferring energy on the fluoro compound-containing gas under reduced pressure; and partially or completely converting the excited fluoro compound-containing gas containing the excited fluoro compound into Funder normal pressure or overpressure.

Processes and equipments for preparing F2-containing gases, as well as process and equipments for modifying the surfaces of articles

The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Process for producing carbonyl fluoride

A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Plasma cleaning gas and plasma cleaning method

A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Cleaning gas and etching gas

The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF OCOF and CF OCF OCOF, and O in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF COF, C F COF or CF (COF) and O in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF , etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Cleaning gases and etching gases

Growing community of inventors

Tokyo, Japan

Taisuke Yonemura