Sumco Corporation

National Institute of Advanced Industrial Science and Technology

Taisuke Mizuno

Kazumi Inagaki

Shinichi Miyashita

Shinichiro Fujii

Shin-ichiro Fujii

Provided is a spray chamber including a sample introduction port portion into which a gas flow containing sample droplets that have been atomized by a nebulizer is introduced, a discharge port portion that discharges at least a part of the gas flow introduced into the sample introduction port portion to the outside, and a flow passage tube portion that has the sample introduction port portion on one end portion thereof and the discharge port portion on the other end portion thereof and serves as a flow passage for the introduced gas flow, wherein the flow passage tube portion includes a first tube portion having the discharge port portion on one end portion thereof and a second tube portion having the sample introduction port portion on one end portion thereof, the spray chamber includes a double tube portion.

Spray chamber, sample atomization and introduction device, analysis device, and method of analyzing component in sample

The sample introduction device includes a nebulizer that atomizes a sample liquid; a spray chamber that has one end into which a spray port part of the nebulizer is inserted and the other end from which at least a part of liquid droplets of the sample liquid sprayed from the spray port part is discharged to an outside; and a heating electromagnetic wave radiation unit that is arranged outside the spray chamber, wherein the heating electromagnetic wave radiation unit performs radiation of heating electromagnetic waves from the outside of the spray chamber toward at least a part of the spray chamber other than a part into which the spray port part of the nebulizer is inserted.

Sample introduction device, inductively coupled plasma analyzing device and analyzing method

Provided is a method of analyzing metal contamination of a silicon wafer, the method including etching a surface layer region of the silicon wafer by bringing a surface of a silicon wafer to be analyzed into contact with etching gas that includes hydrogen fluoride gas and nitric acid gas; bringing an exposed surface of the silicon wafer, exposed by the etching, into contact with gas generated from a mixed acid including hydrochloric acid and nitric acid; heating the silicon wafer that has been brought into contact with the gas generated from the mixed acid; bringing the exposed surface, exposed by the etching, of the silicon wafer after the heating into contact with a recovery solution; and analyzing a metal component in the recovery solution that has been brought into contact with the exposed surface, exposed by the etching, of the silicon wafer.

Growing community of inventors

Saga, Japan

Taisuke Mizuno