Ocg Microelectronic Materials, Inc.

Olin Microelectronic Chemicals, Inc.

Olin Microelectronics Chemicals, Inc.

Taishih Maw

Kenji Honda

Donald F Perry

A non-corrosive cleaning composition for removing plasma etching residues comprising water, at least one quaternary ammonium hydroxide, and at least one corrosion inhibitor selected from (i) quaternary ammonium silicates and (ii) catechol nucleus-containing oligomers having a molecular weight in the range of about 220 to about 5,000.

Non-corrosive cleaning composition for removing plasma etching residues

A stripping and cleaning composition comprising water, at least one amine compound, and at least one corrosion inhibitor selected from (a) quaternary ammonium silicate and (b) a catechol nucleus-containing oligomer having a molecular weight of about 220 to about 5,000, and optionally a polar organic solvent.

Photoresist stripping and cleaning compositions

A photoresist stripping composition containing: (a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5; (b) 70-20% by weight of alkanolamine compounds; and (c) 0.1-10% by weight of 6,6',6'-(1,3,5-triazine-2,4,6-triyltriimino) tris(hexanoic acid).

Photoresist stripping composition

A photoresist stripping composition containing:

A non-corrosive positive photoresist stripper composition comprising:

Non-corrosive photoresist stripper composition

A non-corrosive photoresist composition containing:

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Cumberland, RI, United States of America

Taishih Maw