Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Taishi Sasaki

Mikio Ishihara

Hiroyuki Harada

Yosuke Nakata

Ken Sakamoto

Taketoshi Shikano

Yuki Yoshioka

Tsuyoshi Takayama

Toru Kimura

Mitsugu Tanaka

Hajime Kato

Dai Nakajima

Yukio Yasuda

Noboru Miyamoto

Tatsuya Kawase

Yuji Imoto

Kazuaki Hiyama

Yusuke Kaji

Katsuhiko Kondo

A semiconductor device according to the first disclosure includes a base plate that has an upper surface and a back surface on a side opposite the upper surface and at the back surface of which an annular groove is formed, a substrate provided on the upper surface of the base plate and a semiconductor chip provided on an upper surface of the substrate, wherein the base plate has a convex warping part that warps in a convex shape toward the upper surface side, and a part of the groove, which is formed at the convex warping part is deeper at a position farther away from a maximum warping part having a largest warp in the convex warping part.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor chip () is bonded to an upper surface of an electrode substrate () via a first solder (). A lead frame () is bonded to an upper surface of the semiconductor chip () via a second solder (). An intermediate plate () is provided in the first solder () between the electrode substrate () and the semiconductor chip (). A yield strength of the intermediate plate () is higher than yield strengths of the electrode substrate () and the first solder () within the whole operating temperature range of the semiconductor device.

Semiconductor device having high yield strength intermediate plate

An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.

Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion

Provided is a technique for preventing warps of cooling plates due to a contraction of a joining material, thereby preventing a reduction in cooling performance of a semiconductor device. The semiconductor device includes the following: a first cooling plate; a second cooling plate facing the first cooling plate; a semiconductor chip joined between the circuit pattern of the first cooling plate and the circuit pattern of the second cooling plate with a joining material; and a case containing part of the first cooling plate, part of the second cooling plate, and the semiconductor chip. The semiconductor chip is mounted in a semiconductor-chip mounting part between the first cooling plate and the second cooling plate. The case is provided with a portion corresponding to the semiconductor-chip mounting part and to surroundings thereof. The portion has an up-and-down width greater than an up-and-down width of the remaining portions of the case.

Semiconductor device

An object of the present invention is to provide a highly reliable semiconductor device that allows voids remaining in a bonding material to be reduced. The semiconductor device includes a semiconductor chip, an insulation substrate, a metal base plate, a resin section, and a bump. The semiconductor chip is warped into a concave shape. On the insulation substrate, the semiconductor chip is mounted by bonding. The metal base plate has the insulation substrate mounted thereon and has a heat dissipation property. The resin section seals the insulation substrate and the semiconductor chip. The bump is disposed in a joint between the semiconductor chip and the insulation substrate. A warp amount of the semiconductor chip warped into a concave shape is equal to or greater than 1 &#x3bc;m and less than a height of the bump.

A semiconductor chip () is bonded to an upper surface of the conductive substrate (). A control terminal () is disposed outside the semiconductor chip () and connected to a control electrode of the semiconductor chip () via a lead (). A case () surrounds the semiconductor chip (). A sealing material () seals the semiconductor chip (). The lead frame () includes a bonded part () joined to the semiconductor chip (), and an upright part () embedded in the case (), extending from the bonded part () to an outer side of the control terminal (), and standing upright vertically relative to an upper surface of the semiconductor chip ().

Semiconductor device, inverter unit and automobile

A semiconductor device incorporating a heat spreader and improved to inhibit dielectric breakdown is provided. The semiconductor device has an electrically conductive heat spreader having a bottom surface, a sheet member having a front surface and a back surface electrically insulated from each other, IGBTs and diodes fixed on the heat spreader and electrically connected thereto, and a molding resin. The front surface contacts with the bottom surface and has a peripheral portion jutting out from edges thereof. The molding resin encapsulates the front surface of the sheet member, the heat spreader and the semiconductor elements. At least part of the back surface of the sheet member is exposed out of the molding resin. The heat spreader has, at a corner of its bottom surface, corner portions having a beveled shape or a curved-surface shape as seen in plan and having a rectangular shape as seen in section.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

A method of manufacturing a semiconductor device comprises: preparing a lead frame including a package external region and a package internal region, a burred surface being provided at a top end of a side of the lead frame, and a fracture surface being provided in the vicinity of the top end of the side; chamfering the top end of the side in the package external region; mounting a semiconductor element on the lead frame and sealing the semiconductor element with mold resin in the package internal region; and removing resin burr provided on the side of the lead frame in the package external region after the chamfering and the sealing.

Method for manufacturing semiconductor device including removing a resin burr

Provided is a semiconductor device including a heat dissipating fin; an insulating sheet bonded to an upper surface of the heat dissipating fin, with a part of the upper surface being exposed; a heat spreader located on the insulating sheet; a power element located on the heat spreader; and a transfer molding resin located to cover a predetermined surface including the part of the upper surface of the heat dissipating fin, the insulating sheet, the heat spreader and the power element, wherein the upper surface of the heat dissipating fin has a protruding shape and/or recessed shape located so as to bind an edge of the insulating sheet.

A power module includes: an encapsulation-target portion having at least one semiconductor element; and an encapsulation member that has first and second planes between which the encapsulation-target portion is interposed, and that encapsulates the encapsulation-target portion. The encapsulation member has, on the at least one semiconductor element, at least one opening that exposes part of a surface of the encapsulation-target portion the surface being on a side of the first plane. Thus, a semiconductor device of which size can be reduced can be provided.

A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing () is made of a thermosetting resin, such as epoxy resin, and has a top surface (T) and a bottom surface (B). A through hole () is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing () to pass through between the top surface (T) and the bottom surface (B). Electrodes (N,P,) have their first ends projected from sides of the mold resin casing (). The bottom surface (B) of a heat spreader () is exposed in the bottom surface (B) of the mold resin casing (). The heat spreader () has an opening () formed around the through hole ().

Growing community of inventors

Tokyo, Japan

Taishi Sasaki