Kabushiki Kaisha Toyota Chuo Kenkyusho

Taishi Kimura

Daisuke Nakamura

Tetsuo Narita

Keita Kataoka

A semiconductor device includes: a substrate; and an n-type layer including a nitride semiconductor formed on the surface of the substrate. In the n-type layer, the concentration of donor impurities (excluding O) is 1&#xd7;10cmor more and 1&#xd7;10cmor less, the concentration of C impurities is 1&#xd7;10cmor less, the concentration of O impurities is 1&#xd7;10cmor less, the concentration of Ca impurities is 1&#xd7;10cmor less, and the sum total of the concentrations of the C impurities, the O impurities, and the Ca impurities is lower than the concentration of the donor impurities. Such a semiconductor device can be fabricated by using a halogen-free vapor phase epitaxy (HF-VPE) device.

Semiconductor device and method for manufacturing the same

An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%&#x2264;(1&#x2212;V/V)&#xd7;100&#x3c;100% and a relationship of 0.0003&#x3c;a/L&#x3c;1.1. Vis an apparent volume of the porous baffle plate, Vis a total volume of the through-holes contained in the porous baffle plate, 'a' is a diameter of the through-hole, and L is a length of the through-hole.

Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal

In a gallium nitride crystal, a nanovoid density in the crystal is less than 1&#xd7;10[cm]. A crystal growth apparatus is an apparatus for manufacturing a gallium nitride crystal, wherein a member having a B concentration of less than 1 ppm at least at a surface part is used as a member used at a part where a temperature is 500&#xb0; C. or higher (high-temperature member) among members exposed to a crystal growth space. When such a crystal growth apparatus is used, a gallium nitride crystal wherein a nanovoid density in the crystal is less than 1&#xd7;10[cm] is obtained.

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Nagakute, Japan

Taishi Kimura