Applied Materials, Inc.

Taisen Kawahiro

Carlos Caballero

Ramakrishnan Bashyam

Peichun Lv

Kazuyoshi Iwama

Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.

Growing community of inventors

Tokyo, Japan

Taisen Kawahiro