Fujimi Incorporated

Taira Otsu

Kazusei Tamai

Hitoshi Morinaga

Keigo Ohashi

Tomoaki Ishibashi

Youhei Takahashi

Eiichi Yamada

Naoyuki Ishihara

There is provided a polishing composition, containing abrasive grains and an acid represented either by R&#x2014;R&#x2014;SOH (wherein Ris a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and Ris a hydroxy group, a carboxy group, or a sulfonic acid group when Ris the linear alkylene group, or Ris a carboxy group or a hydroxymethyl group when Ris the linear hydroxyalkylene group), or by CH&#x2014;R(wherein Ris a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.

Polishing composition and polishing method using the same

Growing community of inventors

Ichinomiya, Japan

Taira Otsu