Other

Fuzhou University

Mindu Innovation Lab

Tailiang Guo

Yongai Zhang

Zhixian Lin

Yun Ye

Liqin Hu

Yuxiang You

Sheng Xu

Chaoxing Wu

Kun Wang

Xiongtu Zhou

Qun Yan

Jianmin Yao

Zhilong Chen

Liqin Jiu

Ye Liu

Dianlun Li

The invention relates to a μLED light-emitting and display device with single-ended electrical contact and single-ended carrier injection, and a manufacturing method of the μLED light-emitting and display device. The μLED light-emitting and display device comprises more than one pixel unit, and each pixel unit sequentially comprises a lower pixel electrode, μLED chips, an insulating layer, and an upper pixel electrode from bottom to top, wherein the μLED chips directly contact with the lower pixel electrode, external carriers are injected into the μLED chips through the lower pixel electrode, the insulating layer prevents the external carriers from being injected into the μLED chips through the upper pixel electrode, and the μLED chips are lit by an alternating electric field applied between the upper pixel electrode and the lower pixel electrode. The invention avoids the complicated bonding process, and is expected to improve the market competitiveness of the μLED light-emitting and display device.

μLED light-emitting and display device with single-ended electrical contact and single-ended carrier injection, and manufacturing method therefor

The present invention relates to display manufacturing technology, especially for a dielectric-free triode field emission display device based on double-gate/single-cathode type electron emission units and the device drive methods. This device comprises parallelly positioned anode and cathode/gate plates, during production, gate/cathode/gate electron emission units are set on the cathode/gate plate side by side. The spacing between cathode and gate electrodes is vacuum circumstance. For each cathode, an anode is positioned on the anode plate, facing the cathode. And the voltages applied on the cathode and gate electrodes are to scan and the anode voltage is to adjust the signal. When the electrodes on the cathode/gate plate take on fixed roles, fixed voltages are used to drive the device. When these electrodes on the cathode/gate plate can be used interchangeably as cathode or gate electrodes, respectively, pulse scanning method is used to drive the device.

Dielectric-free triode field emission display device based on double-gate/single-cathode type electron emission units and the device drive methods

The present invention relates to a symmetric quadrupole structured field emission display without spacer comprising the upper and under substrates with a dielectric layer in between, wherein comb-like dielectric layer with lateral connection belts and a number of longitudinal working belts and longitudinal anodes are arranged on the upper substrate, bus electrodes are arranged longitudinally along the center on each anode, on the top, longitudinal alternating phosphor layer and dielectric layer for isolation on anode, gate electrodes are arranged on both sides of each longitudinal work belts, with the bus electrode as symmetry center, forming interdigital gate electrodes, horizontal cathode electrodes and longitudinal auxiliary electrodes are on the under substrate, resistor layer for current limiting and dielectric layer for cathode protection are arranged alternating horizontally on each cathode electrode, each intersect of the auxiliary electrode and cathode is isolated by the dielectric layer for cathode.

Symmetric quadrupole structured field emission display without spacer

The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.

Triode-structured field emission display with anode and gate on the same substrate

Growing community of inventors

Fujian, China

Tailiang Guo