Canon Kabushiki Kaisha

Taiko Motoi

Toshiaki Aiba

Rie Ueno

Naoko Miura

Kumi Nakamura

Masaaki Shibata

Masato Yamanobe

Masaru Kamio

Tohru Den

Masahiko Okunuki

Takehiko Kawasaki

Norio Kaneko

Hideaki Takao

Nobuyuki Sekimura

Haruhito Ono

Shinan Wang

Kenji Tamamori

Toyoko Kobayashi

Keisuke Yamamoto

Shin Kobayashi

Tatsuo Murata

Fumio Kishi

Takashi Noma

Hiromitsu Takase

Hiroshi Matsuda

Tatsuya Iwasaki

Tsutomu Ikeda

Eiji Sakamoto

Hidetoshi Nojiri

Nobuki Yoshimatsu

Takeo Tsukamoto

Sotomitsu Ikeda

Kazuaki Ohmi

Ryoji Fujiwara

Katsuhiko Shinjo

Masatake Akaike

Akiko Iimura

Akiko Kitao

Fujio Iwatate

Mitsuru Ohtsuka

Eiji Ozaki

Shinya Takagi

Atsuko Shinjou

A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Method for forming etching mask, method for fabricating three-dimensional structure and method for fabricating three-dimensional photonic crystalline laser device

An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229&#xb1;0.5 eV and a sub peak having a peak top in the range of 228.1&#xb1;0.3 eV.

Electron-emitting device, electron source, and image display apparatus

A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 &#x3bc;m tin in depth according to a predetermined line width.

Method of manufacturing a nano structure by etching, using a substrate containing silicon

A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 &#x3bc;m in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

Nano structure and method of manufacturing nano structure

A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.

Method for fabricating three-dimensional photonic crystal

The invention provides a cross section evaluating apparatus capable of analyzing the cross sectional structure in a state where the temperature of the specimen is regulated. There is disclosed an information acquisition apparatus comprising a stage for placing the specimen, temperature regulation means for regulating the temperature of the specimen, exposure means for exposing a surface, of which information is desired, of the specimen, and information acquisition means for acquiring information relating to the surface exposed by the exposure means.

Information acquisition apparatus, cross section evaluating apparatus, cross section evaluating method, and cross section working apparatus

A sample processing apparatus includes a stage for supporting a sample, a first temperature controller for controlling a temperature of the sample, an ion beam generator for irradiating the sample with an ion beam, and a detector for detecting a signal emitted from the sample in response to the irradiation of the ion beam. Also provided is a probe for obtaining a part of the sample processed by the irradiation of the ion beam and conveying it to a sample table, a second temperature controller for controlling a temperature of the probe, and a third temperature controller for controlling a temperature of the sample table.

Probe-holding apparatus, sample-obtaining apparatus, sample-processing apparatus, sample-processing method and sample-evaluating method

To reuse glass used in a flat panel display, processing suitable for global environment such as processing of separating a lead component must be realized. A disassembly processing method for a flat panel display having a structure in which a face plate and rear plate mainly containing glass are airtightly joined via a frame with frit glass is characterized by including the step of separating the face plate and rear plate joined with the frit glass. The separation step is characterized by separating the face plate and rear plate by cutting, dissolution, or melting.

Glass substrate processing method and material removal process using x-ray fluorescence

A sample processing apparatus includes a probe, a probe mover for moving the probe such that the probe is brought into contact with a part of a sample, an adhering device for adhering the probe to the part of the sample, and an ion beam generator for irradiating the sample with an ion beam to separate the part of the sample from a remaining body of the sample. A temperature controller controls temperatures of the probe and the sample individually to prevent a temperature change of the part of the sample when the probe is bought into contact with the part of the sample and when the sample is irradiated with an ion beam by the ion beam generator.

An apparatus for evaluating a cross section of a specimen in a specimen chamber, wherein the apparatus includes a specimen stage for placing the specimen, a temperature regulation unit for regulating the temperature of the specimen, an ion beam generation unit for irradiating the specimen with an ion beam thereby performing cross section processing and observation of the specimen, a detection unit for detecting emission signals emitted from the specimen in response to the irradiation of the ion beam for observing the specimen, and a marking unit for marking the specimen.

Apparatus and method for evaluating cross section of specimen

Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.

Electron-emitting device, electron source using the electron-emitting devices, and image-forming apparatus using the electron source

A display device includes a first substrate and a second substrate disposed opposite to each other, and a display medium including an insulating liquid and electrophoretic colored particles dispersed therein and disposed between the first and second substrates. A first electrode and a second electrode are provided for applying a voltage to the display medium so as to move the colored particles between the first and second electrodes to effect a display depending on a voltage applied to the first and second electrodes. The electrophoretic colored particles are distributed uniformly without localization by incorporating the display medium in a plurality of light-transmissive tubes, and disposing and fixing the plurality of tubes in intimate contact with each other between the first and second substrates.

Display device and process for production thereof

Spacer recovery method and apparatus used during disassembling of an image display apparatus

An electron-emitting device includes a substrate, first and second carbon films disposed so as to have a first gap between the first and second carbon films on a surface of the substrate, and first and second electrodes electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.

Electron-emitting device having carbon films with a particular orientation, electron source using electron-emitting device, and image forming apparatus

Growing community of inventors

Atsugi, Japan

Taiko Motoi