Applied Materials, Inc.

Taiki Hatakeyama

Sean S Kang

Daisuke Shimizu

Chunlei Zhang

Katsumasa Kawasaki

Srinivas D Nemani

Sergio Fukuda Shoji

Bhargav S Citla

Biao Liu

Jairaj Joseph Payyapilly

Shinichi Koseki

Qiang Ma

Hikaru Watanabe

Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the carbon-containing precursor. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-and-carbon-containing material from a sidewall of the feature within the substrate. The methods may include providing a nitrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the nitrogen-containing precursor, and doping the silicon-and-carbon-containing material with nitrogen.

Directional selective fill for silicon gap fill processes

Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

Multizone flow distribution system

Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Methods and apparatus for in-situ protection liners for high aspect ratio reactive ion etching

Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of CHFand a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Methods and apparatus for etching semiconductor structures

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San Jose, CA, United States of America

Taiki Hatakeyama