Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Sanyo Electric Co., Ltd.

Taiki Hashiguchi

Yutaka Kirihata

Masato Shigematsu

Takahiro Mishima

Kenta Matsuyama

Yasuko Hirayama

Naoteru Matsubara

Koichi Kubo

A solar cell includes an n-type silicon substrate having a first main surface and a second main surface, an n-type first semiconductor layer disposed above the first main surface, a first intrinsic semiconductor layer disposed between the first main surface and the first semiconductor layer, a p-type second semiconductor layer disposed on the second main surface, and a second intrinsic semiconductor layer disposed between the second main surface and the second semiconductor layer. An oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer is lower than an oxygen concentration at an interface between the silicon substrate and the second intrinsic semiconductor layer. An oxygen concentration at an interface between the second intrinsic semiconductor layer and the second semiconductor layer is higher than an oxygen concentration at an interface between the first intrinsic semiconductor layer and the first semiconductor layer.

Solar cell

A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type on the back surface; a second semiconductor layer of the second conductivity type on the back surface; a first electrode electrically connected to the first semiconductor layer; and an insulating layer for electrically insulating the first semiconductor layer and the second semiconductor layer from each other in a region in which an edge of the first semiconductor layer and an edge of second semiconductor layer overlap. The first electrode includes a first transparent electrode layer and a first collection electrode layer on the first transparent electrode layer. The first transparent electrode layer is separated into a primary electrode layer that is on the first semiconductor layer and a separated electrode layer that is on the second semiconductor layer in the region.

Solar cell and manufacturing method of the same

There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer () and an n-type amorphous silicon layer () are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (); a second step in which an i-type amorphous silicon layer () and an n-type amorphous silicon layer () are formed over a back surface of the n-type monocrystalline silicon substrate (); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer () and the n-type amorphous silicon layer ().

Method for producing photoelectric conversion element

The method disclosed herein includes a first step of forming an i-type amorphous silicon layerand an n-type amorphous silicon layeron a light-receiving surface of an n-type monocrystalline silicon substrate; a second step of forming an i-type amorphous silicon layerand an n-type amorphous silicon layeron a backside surface of the n-type monocrystalline silicon substrate; and a third step of forming, after completion of the first step and the second step, an antireflection layeron the n-type amorphous silicon layer, and subsequently forming an insulating layeron the n-type amorphous silicon layer

A manufacturing includes forming an insulating layer covering a portion of a first semiconductor layer on a semiconductor substrate, removing a portion of the first semiconductor layer which is not covered with the insulating layer with an etchant to expose a potion of the first main surface, and cleaning the first main surface using a cleaning liquid containing hydrofluoric acid. An etching rate by the etchant to etch the first semiconductor layer is higher than an etching rate by the etchant to etch a first surface layer of the insulating layer, the first surface layer being on the side opposite to the first semiconductor layer. An etching rate by the cleaning liquid to etch a second surface layer of the insulating layer, the second surface layer being on the first semiconductor layer side, is lower than an etching rate by the cleaning liquid to etch the first surface layer.

Growing community of inventors

Kaizuka, Japan

Taiki Hashiguchi