Canon Kabushiki Kaisha

Taikan Kanou

Masaru Fujimura

Alice Ehara

A photoelectric conversion apparatus includes a plurality of photoelectric conversion circuits configured to be arranged in a semiconductor layer having a first plane and a second plane. The plurality of photoelectric conversion circuits is individually isolated by an isolation structure. The semiconductor layer includes a plurality of trench portions arranged on the first plane of each of the photoelectric conversion circuits. The plurality of trench portions is configured of a first trench portion extending in a first direction as an in-plane direction of the first plane and a second trench portion extending in a second direction as an in-plane direction of the first plane intersecting with the first direction. A filler member and an airgap are arranged in an interior of a trench portion at a position where the first trench portion and the second trench portion intersect with each other.

Photoelectric conversion apparatus having filler member and airgap arranged in interior of trench portion, photoelectric conversion system, and moving body

A method of manufacturing a semiconductor device including a first region and a second region contacting the first region along a boundary line, includes forming a pattern having an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line. The forming the pattern includes independently performing, for a photoresist applied on a substrate, first exposure for defining the first line, and second exposure for defining the second line, and developing the photoresist having undergone the individually performing the first exposure and the second exposure.

Method of manufacturing forming conductive line pattern in boundary region

A method for manufacturing a semiconductor device includes a first photolithography step of forming a first device pattern corresponding to a first pattern, and a plurality of alignment marks corresponding to a plurality of marks, upon a step of exposing the entire device region in one shot using a first mask including the first pattern and the plurality of marks, and a second photolithography step of, after the first photolithography step, forming second device patterns respectively corresponding to second patterns in a plurality of divided regions which form the device region, upon steps of individually exposing the plurality of divided regions using second masks each including the second pattern corresponding thereto.

Growing community of inventors

Kawasaki, Japan

Taikan Kanou