Kabushiki Kaisha Toshiba

Taijun Murakami

Li Zhang

Tatsuro Uchida

Tadashi Sakai

Koji Yamakawa

Takaaki Yasumoto

Miki Mori

Yukio Kizaki

Takashi Yebisuya

Takasi Togasaki

Taketoshi Suzuki

An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum, and a micro electronic element formed on the bump, wherein solid-phase diffusion bonding is performed at least either between the wiring layer and the bump or between the bump and an electrode of the micro electronic element.

Electronic circuit device

A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.

Porous silicon photo-device capable of photoelectric conversion

Growing community of inventors

Yokohama, Japan

Taijun Murakami