Sharp Kabushiki Kaisha Corporation

501 Sharp Kabushiki Kaisha

Taiji Morimoto

Saburo Yamamoto

Hiroshi Hayashi

Toshio Hata

Shinji Kaneiwa

Mitsuhiro Matsumoto

Seiki Yano

Nobuyuki Miyauchi

Hidenori Kawanishi

Shigeki Maei

Keisuke Miyazaki

Sadayoshi Matsui

Masahiro Yamaguchi

Masanori Watanabe

Kazuaki Sasaki

Osamu Yamamoto

Hiroyuki Hosoba

Masaki Kondo

Kazuhiko Wada

Mototaka Taneya

Masahiro Konishi

Takahiro Suyama

Masafumi Kondo

Kensaku Yamamoto

Masaki Tatsumi

Takehiro Shiomoto

Takashi Ishizumi

Osamu Kawasaki

Yoshinori Ohitsu

Zenkichi Shibata

Yoshiaki Ueda

Shigetoshi Ito

Takeshi Kamikawa

Toshihiko Yoshida

Makoto Agatani

Tsukasa Inoguchi

Nobuhiro Nishiyama

Hideaki Tatsuta

Hiromu Tagashira

Yuhichi Memida

Hiroshi Kayashi

Noboyuki Miyauchi

This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

Surface mounting type light emitting diode and method for manufacturing the same

This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes an insulating base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

Surface mounting type light emitting diode

A light emitting apparatus is described. The apparatus includes a light emitting section having a plurality of light sources, the plurality of light sources each including a semiconductor light emitting element and one or more types of phosphors for performing a wavelength conversion on a portion of light outputted from the semiconductor light emitting element to radiate fluorescence, and the plurality of light sources each emitting light of different colors; and a light emitting control section for controlling emission intensity of each of the plurality of light sources to control a color temperature of a combined light emitted from the plurality of light sources.

Light emitting apparatus, lighting device and liquid crystal display apparatus

Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances dat which two of the light-emitting elements in each of the pairs are provided are less than distances dat which the pairs are provided.

Planar light source, display device and method for manufacturing same

Planar light source, display device and method for manufacturing the same

A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.

Injection apparatus, semiconductor light emitting apparatus, manufacturing apparatus, and manufacturing method of semiconductor light emitting apparatus

By using a light emitting device including a substrate and a light emitting unit, the light emitting unit including: a plurality of light emitting elements that are mounted on substrate and electrically connected to external electrodes; a first sealing member layer containing a first fluorescent material, formed to cover light emitting elements; and a second sealing member layer containing a second fluorescent material, formed on first sealing member layer, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device capable of suppressing color shifts and the like by the fluorescent materials, and of being easily manufactured, as well as a method for manufacturing the same.

Light emitting device and method for manufacturing the same

In a light emitting apparatus using LEDs, luminance and chromaticity of the LED changes largely due to a temperature change. Meanwhile, by using phosphors, it is possible to improve the stability of the luminance and chromaticity against the temperature change. However, color reproducibility of the light emitting apparatus decreases. Therefore, the light emitting apparatus includes a first LED, a second LED, a first phosphor which is excited by the second LED and emits light whose color is the same as or similar to a color of light emitted from the first LED, and a control circuit which controls a ratio between an emission intensity of the first LED and an emission intensity of the second LED.

Light emitting apparatus, display apparatus and method for controlling light emitting apparatus

A direct-type backlight device for a non-self-luminous image display panel has a light-emitting area corresponding to a display area of the image display panel. The light-emitting area is arranged by combining a plurality of backlight substrates each of which is provided with (i) a color sensor for detecting an incident light intensity and (ii) red, green, and blue LEDs whose respective light intensities are controlled in accordance with a detection result obtained by the color sensor. This arrangement allows reduction of brightness unevenness entirely in the light-emitting area of the backlight device.

Backlight device, display apparatus including backlight device, method for driving backlight device, and method for adjusting backlight device

A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 &#x3bc;m (about 0.5 &#x3bc;m) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

Semiconductor laser device and manufacturing method therefor

An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrateand thereafter etching is carried out until reaching an n-type AlGaAs clad layerfrom the surface. Next, the n-type AlGaAs clad layeris removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layeris lightly etched. Thus, the n-type GaAs buffer layerof the AlGaAs-based semiconductor laseris left in a slightly abraded state on the n-type GaAs substratemaintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laserat the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laserattributed to the poor flatness of the groundwork can be improved.

Semiconductor laser device having a multi-layer buffer layer

A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.

Nitride gallium compound semiconductor light emission device

There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

Semiconductor laser device and method of fabricating the same

An AlGaAs-based semiconductor laseris formed on an n-type GaAs substrate, and thereafter, a non-doped GaAs protective layeris formed. When the n-type substrateis exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layercan be prevented. Furthermore, the impurity evaporated from the p-type contact layercan be prevented from readhering onto the exposed n-type substrate. A layer where the n-type GaAs substrateand the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laseris succeedingly formed, and the reliability in long-term operation can be improved.

Semiconductor laser device fabricating method

A gallium nitride based light emitting element includes an n type electrode formed on one main surface of an n type gallium nitride substrate, in which the area ratio of the n type electrode with respect to the area of the one main surface is set to be in the range of at least 5% and at most 60%, and the n type electrode includes an n type ohmic electrode layer for introducing current.

Gallium nitride based light emitting element

Growing community of inventors

Onomichi, Japan

Taiji Morimoto