Ngk Insulators, Inc.

Taiji Kiku

Yutaka Unno

Shinji Yamaguchi

Nobuyuki Kondou

Yoshinobu Goto

Akiyoshi Hattori

According to a related art for evaluating the position accuracy of heaters with respect to the plate, it is necessary to attach an energizing electrode to the heaters, and energize the heaters for a predetermined period to heat the entire plate, before measuring the temperature distribution map. Therefore, there is a problem in that several tens of minutes are required until the temperature distribution map can be measured. As the plate becomes larger, the time required for energizing the heaters to heat the entire plate becomes longer. A technique for evaluating the position accuracy of heaters with respect to the plate, without executing a process for energizing the heaters to heat the plate is disclosed.

Position accuracy evaluation method and position accuracy evaluation apparatus

There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

Susceptor for semiconductor manufacturing apparatus

A manufacturing method for a substrate heating device comprises forming a base plate having a substrate heating surface in which a resistance heating element is buried, forming a tubular member, joining the tubular member to the base plate, measuring temperature distribution in the substrate heating surface by supplying power to the resistance heating element, and grinding the tubular member according to a grinding condition based on a measurement result of the temperature distribution.

Method of manufacturing a substrate heating device

Disclosed is a blast processing method for removing a deposit adhered onto a surface of a ceramic heater formed of aluminum nitride by blowing a blasting material onto the surface. Abrasive grains made of silicon carbide or aluminum oxide and having a grain size of #400 to #800 are used as the blasting material, and a blast pressure as a pressure when the blasting material collides with the surface of the ceramic heater is set at 40 to 150 gf/cm.

Method of blasting process

An object of the present invention is to provide a ceramic susceptor for considerably reducing the count number of metal atoms on the surface of a semiconductor after the semiconductor is treated, specifically to 1&#xd7;10atoms/cmor lower. It is provided a ceramic susceptorhaving a face for mounting semiconductorwherein each of metal elements other than metal element(s) constituting the ceramic material has a count number of 1&#xd7;10atoms/cmor lower. It is further provided a method of cleaning a ceramic susceptorhaving a facefor mounting semiconductor, wherein the susceptor is cleaned using a complexing agent capable of forming a complex with a metal element.

Ceramic susceptor and a method of cleaning the same

The present invention provides a method for cleaning a ceramic member for use in a system for producing semiconductors. The method has the step of cleaning the ceramic member with an organic acid or a weak acid. Preferably, the ceramic member is cleaned with a strong acid before the cleaning with an organic acid or a weak acid. The ceramic member may be subjected to a blasting treatment before the cleaning with an organic acid or a weak acid. According to the method, the amount of metal transferred from the ceramic member to a semiconductor may be considerably reduced.

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Handa, Japan

Taiji Kiku