Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Sankyo Company, Limited

Taiichiro Watanabe

Fumihiko Koga

Tetsuji Yamaguchi

Hideaki Togashi

Ryosuke Nakamura

Keiji Mabuchi

Akihiro Yamada

Shintarou Hirata

Hideo Kido

Yuko Ohgishi

Yoshihiro Ando

Hiromasa Saito

Yusuke Sato

Yukio Kaneda

Toyotaka Kataoka

Satoshi Keino

Tetsuro Takada

Kyosuke Ito

Yasuhiro Morisawa

Mitsuru Kataoka

Noritoshi Kitano

Toshiaki Matsuzawa

Yusaku Sugimori

Isao Hirota

Kouichi Harada

Kazufumi Watanabe

Hirokazu Ejiri

Nobuhiro Kawai

Koichi Baba

Yasuhisa Tochigi

Provided is a solid-state imaging device that includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Solid-state imaging device and method of controlling solid-state imaging device

There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrodethat are stacked, in which the photoelectric conversion unit further includes a charge storage electrodearranged apart from the first electrodeand arranged to face the photoelectric conversion layerthrough an insulating layer, and when photoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute value of a potential applied to a partof the photoelectric conversion layerfacing the charge storage electrodeis a value larger than an absolute value of a potential applied to a regionof the photoelectric conversion layerpositioned between the imaging element and an adjacent imaging element.

Imaging element, stacked imaging element, and solid-state imaging apparatus

Provided are a light receiving element and an electronic apparatus that prevent generation of a false signal due to light emission caused by a circuit. The light receiving element includes a plurality of pixels. Each of the plurality of pixels includes: a photoelectric conversion layer that photoelectrically converts incident light; a signal reading circuit including an in-pixel transistor that is provided on a side opposite to a light incident side surface of the photoelectric conversion layer, amplifies signal charge generated by the photoelectric conversion layer, and reads the signal charge out of a pixel array; and a metal junction that bonds the photoelectric conversion layer and the signal reading circuit. The metal junction covers the in-pixel transistor when viewed from the light incident side surface of the photoelectric conversion layer.

Light receiving element and electronic apparatus

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.

Imaging device

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

Solid-state imaging device, drive method thereof and electronic apparatus

A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens. The first imaging element includes a first electrode, a third electrode, and a second electrode. The pixel further includes a third electrode control line VOA connected to the third electrodeand a plurality of control linesB connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lensincluded in the pixel and any one of the plurality of control linesB included in the pixel is shorter than a distance between the center of the on-chip micro lensincluded in the pixel and the third electrode control line VOA included in the pixel.

Imaging element, laminated imaging element, and solid-state imaging device

Growing community of inventors

Kanagawa, Japan

Taiichiro Watanabe