Micron Technology Incorporated

Ps4 Luxco S.a.r.l.

Longitude Semiconductor S.a.r.l.

Elpida Memory, Inc.

Taihei Shido

Chiaki Dono

Chikara Kondo

Tomoyuki Shibata

Seiji Narui

Homare Sato

Yuki Ebihara

Minehiko Uehara

Toshio Ninomiya

Seiichi Maruno

Shinya Miyazaki

Mototsugu Fujimitsu

Nobuhiro Oodaira

Naoki Kitai

Apparatuses and methods for transmitting data between a plurality of chips are described. An example apparatus includes: a first chip, wherein the first chip includes a receiver that receives a data strobe signal and further generates an internal strobe signal responsive, at least in part, to the data strobe signal, the internal strobe signal including a first edge and a second edge following the first edge; a buffer circuit coupled to a set of input terminals and captures first data at the set of input terminals responsive, at least in part, to the first edge of the internal strobe signal and further captures second data at the set of input terminals responsive, at least in part, to the second edge of the internal strobe signal; a driver coupled between the buffer circuit and a set of data terminals and configured to be activated to provide the first and second data from the buffer circuit to the set of data terminals responsive, at least in part, to a control signal; and a width expanding circuit that provides the control signal responsive, at least in part, to the internal strobe signal.

Memory device with write data bus control

Apparatuses and methods for an interface chip that interfaces with chips are described. An example apparatus includes: first terminals; circuit groups, each of the circuit groups including circuit blocks being configured to electrically couple to the first terminals; a control circuit that selects one of the circuit groups and electrically couple the first terminals to the circuit blocks of the one of the circuit groups; terminal groups, each of the terminal groups including second terminals, each of the terminal groups being provided correspondingly to each of the circuit groups, the second terminals of each of the terminal groups being smaller in number than the circuit blocks of a corresponding one of the circuit groups; and a remapping circuit that couples the second terminals of each of the terminal groups to selected ones of the circuit blocks of the corresponding one of the circuit groups.

Shared error detection and correction memory

Apparatuses and methods including an interface die that interfaces with dice through memory channels are described. An example apparatus includes a first die. The first die receives a first command including first command information and second command information provided after the first command information. The first die changes an order of providing the first command information and the second command information and provides a second command to a second die, the second command including the second command information and the first command information provided after the second command information in the changed order. The first command information is related to a command function and the second command information is related to a destination of the command function.

Stack access control for memory device

An apparatus includes a first external terminal, a first circuit, a signal line and a second circuit. The first external terminal receives at least one of data mask information and data bus inversion information. The first circuit performs one of an error check operation and a data bus inversion operation. The signal line is coupled between the first external terminal and the first circuit. The second circuit is coupled to the signal line and first a voltage level of the signal line at a substantially constant level responsive to a first control signal.

Apparatuses and methods for fixing a logic level of an internal signal line

Some embodiments include an apparatus that comprise an interface chip having an oscillator to produce an original clock signal, a first memory chip having first memory cells, and a second memory chip having second memory cells. The first memory cells may be refreshed in response to a first clock signal based on the original clock signal. The second memory cells may be refreshed in response to a second clock signal based on the original clock signal.

Apparatus having dice to perform refresh operations

System and method for write data bus control in a stacked memory device

Apparatus having dice to perorm refresh operations

Apparatuses and methods for an interface chip are described. An example apparatus includes a first chip. The first chip includes, on a single semiconductor substrate, first terminals, circuit groups, and terminal groups corresponding to the circuit groups, each of the circuit groups including circuit blocks. A control circuit in the first chip selects one of the circuit groups and electrically couples the first terminals to the circuit blocks of the selected circuit group. Second terminals are included in each of the terminal groups. A number of all of the second terminals in each of the terminal groups is smaller than a number of all of the circuit blocks in the corresponding circuit group. The first chip further includes, for example, a remapping circuit.

A control circuit receives the mode signals supplied from a mode register and a read enable signal READ supplied from a control logic circuit, which activates enable signals ENto ENbased on the mode signals and read enable signal. For example, the read enable signal READ is activated when a read command is issued from the controller. One mode signal can indicate an operation mode in which a multi-purpose register is used, and another mode signal can indicate an operation mode in which the data bus inversion function is used. When a data masking operation is disabled and an error check operation is enabled, the mode register activates a protection signal SEL. When the data masking operation is enabled or the error check operation is disabled, the protection signal SEL is deactivated. The operation of a deserializer is controlled by clock signals and the protection signal SEL.

Embodiments of the present invention relate to a latch circuit (L) which latches a data mask signal (DM) in response to a one-shot signal (NS), and changes the data mask signal (DM) to an active level in response to an error signal (ERR), which indicates that an error is present in write data (DQ), being at an active level; a buffer circuit (BF) which outputs the data mask signal (DM) that has been latched by the latch circuit (L), said data mask signal (DM) being output in response to a write clock signal (WCLK); and a main amplifier () which outputs the write data (DQ) to an internal circuit on the condition that the data mask signal (DM) which has been output from the buffer circuit (BF) is at an inactive level. The present invention can prevent the writing of erroneous write data, and is capable of preventing increased chip surface area.

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Sagamihara, Japan

Taihei Shido