Kioxia Corporation

Skhynix Inc.

Toshiba Memory Corporation

Taiga Isoda

Tadaaki Oikawa

Kazuya Sawada

Young Min Eeh

Eiji Kitagawa

Kenichi Yoshino

Youngmin Eeh

Ku Youl Jung

Jin Won Jung

Guk Cheon Kim

Jong Koo Lim

Daisuke Watanabe

Toshihiko Nagase

Tae Young Lee

Soo Gil Kim

Jae-Hyoung Lee

Taichi Igarashi

Yuichi Ito

Soo Man Seo

Taeyoung Lee

Jung Hyeok Kwak

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, and an oxide layer provided adjacent to the first magnetic layer, the first magnetic layer being provided between the non-magnetic layer and the oxide layer, and the oxide layer containing a rare earth element, boron (B), and oxygen (O).

Magnetic memory device

A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a first element group. The second ferromagnetic oxide layer includes an oxide of an alloy of the one of iron and cobalt included in the second ferromagnetic oxide layer with a first element, which has a standard electrode potential lower than that of iron or cobalt and that of the one element of the first element group included in the second ferromagnetic layer.

Magnetoresistance memory device

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a molybdenum (Mo) layer provided on an opposite side of the non-magnetic layer with respect to the second magnetic layer, and an oxide layer provided between the second magnetic layer and the molybdenum (Mo) layer and containing a predetermined element selected from a rare earth element, silicon (Si) and aluminum (Al).

According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.

Memory device

In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetisation direction, a second magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided on a lower side of the first magnetic layer, the second magnetic layer and the nonmagnetic layer, having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer, and formed of an alloy of cobalt (Co) and platinum (Pt), and a buffer layer provided on a lower side of the third magnetic layer and including a first layer portion containing rhenium (Re).

According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer and a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer, first, second and third nonmagnetic layers. The firs nonmagnetic layer is between the first and second magnetic layers, the second magnetic layer is between the first nonmagnetic layer and the third magnetic layer, the third magnetic layer is between the second magnetic layer and the second nonmagnetic layer, the third nonmagnetic layer is between the second and the third magnetic layers, the third magnetic layer contains Co and Pt, and the second nonmagnetic layer contains at least one of Mo and W.

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Magnetoresistive memory device

A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.

An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe&#x2014;O bond.

Electronic device including thermal stability enhanced layer including homogeneous material having Fe-O bond

A magnetic memory device includes a magnetoresistance effect element including a first, second, and third ferromagnetic layer, a first non-magnetic layer between the first and second ferromagnetic layer, and a second non-magnetic layer between the second and third ferromagnetic layer. The second ferromagnetic layer is between the first and third ferromagnetic layer. The third ferromagnetic layer includes a fourth ferromagnetic layer in contact with the second non-magnetic layer, a third non-magnetic layer, and a fourth non-magnetic layer between the fourth ferromagnetic layer and the third non-magnetic layer. The first non-magnetic layer includes an oxide including magnesium (Mg). A melting point of the fourth non-magnetic layer is higher than the third non-magnetic layer.

Magnetic memory device that suppresses diffusion of elements

A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode includes one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.

According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.

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Seoul, South Korea

Taiga Isoda