Sumitomo Chemical Company, Limited

Sciocs Company Limited

Mie University

Hitachi Cable, Inc.

Taichiro Konno

Hajime Fujikura

Takeshi Kimura

Shusei Nemoto

Takehiro Yoshida

Hideto Miyake

Takayuki Suzuki

Osamu Goto

Tsunehiro Unno

Toshio Kitamura

Tetsuji Fujimoto

Takayuki Numata

Shota Kaneki

There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5×10cm, O concentration in the p-type layer is less than 5×10cm, Si concentration in the p-type layer is less than 1×10cm, and F concentration in the p-type layer is 1×10cmor more.

Semiconductor laminate and method for manufacturing semiconductor laminate

An object is to improve quality of a nitride crystal. A crystal represented by a composition formula InAlGaN (satisfying 0≤x≤1, 0≤y≤1, and 0≤x+y≤1), wherein the concentration of carbon in the crystal is less than 1×10cm, and the concentration of an electron trap E3 that exits in an energy range from 0.5 eV to 0.65 eV from a lower end of a conduction band in the crystal is less than 1×10cm.

Nitride crystal, semiconductor laminate, and method for manufacturing nitride crystal

There is provided a nitride semiconductor template, including: a substrate having a front surface and a back surface opposite to the front surface; a back side semiconductor layer provided on a back surface side of the substrate, comprising a polycrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate; and a front side semiconductor layer provided on a front surface side of the substrate, comprising a monocrystalline group III nitride semiconductor, and having a linear expansion coefficient different from a linear expansion coefficient of the substrate, wherein a thickness of the front side semiconductor layer is a thickness exceeding a critical thickness at which cracks are generated in the front side semiconductor layer when only the front side semiconductor layer is formed without forming the back side semiconductor layer.

Nitride semiconductor template, method for manufacturing nitride semiconductor template, and method for manufacturing nitride semiconductor free-standing substrate

Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Group-III nitride laminated substrate and semiconductor element

Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.

Group III nitride laminate, semiconductor element, and method for producing group III nitride laminate

A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 &#x3bc;m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Group-III nitride laminated substrate and semiconductor light-emitting element

There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.

Nitride semiconductor template and nitride semiconductor device

An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount &#x3b5;of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount &#x3b5;of the first AlN layer in the a-axis direction.

Nitride semiconductor laminated structure, nitride semiconductor light emitting element, and method for manufacturing nitride semiconductor laminated structure

An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), and the concentration of B in the crystal is less than 1&#xd7;10at/cm, and each of the concentrations of O and C in the crystal is less than 1&#xd7;10at/cmin a region of 60% or more of a main surface.

Nitride crystal

There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.

An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InAlGaN (satisfying 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x+y&#x2264;1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 &#x3bc;m.

Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer

There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature lowering part.

Substrate processing apparatus and substrate processing method

A nitride semiconductor template includes a substrate, an AlN layer that is formed on the substrate and that includes Cl, and a nitride semiconductor layer formed on the AlN layer. In the AlN layer, a concentration of the Cl in a region on a side of the substrate is higher than that in a region on a side of the nitride semiconductor layer. Also, a light-emitting element includes the nitride semiconductor template, and a light-emitting layer formed on the nitride semiconductor template.

Nitride semiconductor template and light emitting element

Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Resin may be put into the cavity layer. Also provided is a process for fabricating a light emitting diode wherein the process comprises the steps of growing an AlGaAs layer with high mixed crystal ratio as a sacrificial layer, growing the epitaxial layers on the sacrificial layer to be connected with the mesa portion, and dissolving and removing the sacrificial layer to form the cavity layer. Light is reflected at the interface between a clad layer and the cavity layer or the resin put into the cavity layer, as a consequence, a light-emitting output can be improved. A thick AlGaAs layer with high AlAs mixed crystal ratio for the substrate is not required to be provided, so that the fabrication becomes easy, and uniformity in characteristics can be obtained.

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Hitachi, Japan

Taichiro Konno