Nitto-denko Corporation

Taichi Watanabe

Kazunori Kawamura

Seiki Teraji

Hiroto Nishii

Hironobu Machinaga

Hajime Nishio

Takahiro Nakai

Xiaolei Chen

Takashi Minemoto

Jakapan Chantana

A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Metallic lustrous member with radio wave transmissibility, article using same, and production method therefor

A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(O,S) . . . (1), wherein X is 0.9&#x3c;X&#x2264;1.

Compound solar cell and production method therefor

In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1):0.5&#x2264;/()&#x3c;1&#x2003;&#x2003;(1)(where none of A, B, C are 0)

CIGS compound solar cell

The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

CIGS film, and CIGS solar cell employing the same

A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively.

Growing community of inventors

Ibaraki, Japan

Taichi Watanabe