Canon Kabushiki Kaisha

Taichi Sugimoto

Yasuo Suda

Keiji Ohtaka

Toshiaki Sato

Ichiro Ohnuki

Tetsuo Yoshizawa

Akio Mihara

Hiromichi Yamashita

Toshihiko Takeda

Ken Eguchi

Haruki Kawada

Hideo Kato

Kiyoshi Takimoto

Tsutomu Ikeda

Masahiko Miyamoto

A semiconductor optical device is provided with a photo-electric conversion unit having plural photo-electric conversion elements and is entirely sealed by a sealing member. The photo-electric conversion elements are connected to external leads with electrical connectors. The distance D between a planar outer surface and a photoelectric conversion area satisfies the equation, D.gtoreq./2.multidot.l/tan .theta., where .theta. is a critical angle of total reflection of the sealing member with respect to air and l is the maximum length of said photoelectric conversion area.

Semiconductor photo-sensor and method for manufacturing the same

In a method for manufacturing a semiconductor photo-sensor, an assembly including a photoelectric conversion element having a photoreceiving section, and a lead terminal having an inner lead connected to the photoelectric conversion element by a bonding wire is provided. A light transmitting member is also provided within the cavity spaced apart from the photoelectric conversion element and at a light-incident side of the photoelectric conversion element, the light transmitting member having an inner surface facing an upper surface of the photoelectric conversion element and an outer surface opposite the inner surface. The photoelectric conversion element, the inner lead and the bonding wire are sealed by introducing a light transmitting resin into the cavity so as to provide a relation l&lt;2.multidot.(d.sub.1 +d.sub.2).multidot.tan.theta..sub.1, wherein l is a length of the photoreceiving section of the photoelectric conversion element, d.sub.1 is a thickness of the light transmitting resin above the upper surface of the photoelectric conversion element, d.sub.2 is a thickness of the light transmitting member, and .theta..sub.1 is a total reflection angle of the outer surface of the light transmitting member.

Method for manufacturing a semiconductor photo-sensor

A process for forming a gold thin film comprises subjecting a gold complex to a decomposition treatment to transfer the gold in a solution to a supersaturated state, and forming a crystalline gold thin film composed of a group of monocrystals on the surface of a substrate.

Process for forming gold crystal film

Growing community of inventors

Sagamihara, Japan

Taichi Sugimoto