Fujitsu Corporation

Fujitsu Vlsi Limited

Taichi Saitoh

Toshiaki Sakai

Yasunori Kanai

Kazumasa Nawata

Hiroki Yada

Nobuyuki Tanaka

Hideo Tokuda

Mitsuhisa Shimizu

Minoru Takagi

Tetsuya Nakajima

Hiroyuki Tsunoi

Takayuki Tsuru

Akio Kiso

Hisayosi Ooba

Satoru Sudo

Rokutarou Ogawa

Tosiaki Sakai

A semiconductor integrated circuit device has a first wire for transmitting a first signal and a second wire adjacent to the first wire, for transmitting a second signal having the stronger probability of having an opposite phase to that of the first signal. A space between the first and second wires is wider than a standard wiring space, to reduce a delay in the operation speed of the device due to wiring capacitance produced between the first and second wires.

High-speed semiconductor integrated circuit device with reduced delay in

A logic circuit in which first and second transistors are connected in series between high and low potential power sources with the middle point of the series connection used as the output terminal; A same- and inverse-phase signal generating unit is provided connected between the high and low potential power sources in parallel with the first and second transistors for generating same- and inverse-phase signals based on the single input signal output from the logic circuit. A transient signal generating unit is provided for generating transient large current signals at the rise time of the inverse-phase signals and generating transient cut-off signals at the fall time of the inverse-phase signals. The series connected first transistor is driven and controlled based on the regular-phase signals, while the second transistor is driven and controlled based on the transient large current signal and transient cut-off signal, thus producing an inverse-phase output by a simple circuit construction.

Logic circuit having sharper falling edge transition

A latch circuit including at least three gate circuits, and a noise resistance circuit. A first gate circuit (3, 4, 11, 16) receives a data signal (DT) and a clock signal (CLK). A second gate circuit (1, 7, 13, 17) is connected to an output of the first gate circuit. A third gate circuit (2, 5, 12 18) receives a first inverted clock signal (CLK) at an input terminal. A second input terminal of the third gate circuit is connected to an output of the second gate circuit and is a first output terminal is connected to an input terminal of the second gate circuit, so that a feedback line is formed between the second and third gate circuits. The noise resistance circuit (8, 9, 20, 21) has at least a signal delay element in the feedback line. The noise resistance circuit may include a filter circuit. The noise resistance circuit may also include an amplifier circuit.

ECL latch circuit having a noise resistance circuit in only one feedback

An improved emitter coupled logic circuit suitable for high speed logic operation independent of capacitive load. With previous circuits as the load to be driven become heavier, the capacitive load required a longer time for discharge and the output signal was dulled, resulting in adverse effect on the logic operation when the output changed to a low level from a high level. A pulse has also been previously applied to a pull-down transistor connected between the output and a power source through a capacitor from an inverted phase output to actively discharge the capacitive load. However, when the capacitor is connected to the output it hinders the switching speed of a current switch. In the present invention, a transistor is provided an input circuit and a pulse is applied to a pull-down transistor from the transistor. As a result, an extra capacitive element is not connected to the output end, but a pulse is applied to the pull-down transistor. Accordingly, even if the capacitive load becomes heavier, the speed of the circuit is not harmed.

Emitter coupled logic circuit having independent input transistors

A connecting structure for connecting conductors used for wiring in a semiconductor device comprises a first conductor provided on a part of the semiconductor device for passing the flow of electrons, an insulator provided on the first conductor and formed with a contact hole, and a second conductor provided on the insulator for passing the flow of electrons, in which the second conductor is provided so as to sandwich the insulator together with a part of the first conductor. The first and second conductors are contacted to each other across the insulator at the contact hole so that the electrons flow through the contact hole. The contact hole extends in a general direction of a flow of electrons passing therethrough and has a stepped shape in which a width measured perpendicularly to the general direction of the flow of electrons increases stepwise towards the general direction of the flow of electrons.

Connecting structure for connecting conductors in an electronic apparatus

An ECL (Emitter Coupled Logic) circuit is provided which has an increased ability to drive a large capacitive load or to drive a large fan-out circuit, wherein the power consumption per gate is reduced. The output circuit of the ECL circuit is provided with an emitter follower transistor which has the current therethrough detected by a detecting transistor. A current control transistor is provided to quickly charge the load capacitance under the control of the detecting transistor, and thus, the voltage drop of the output signal is improved. One of the emitter follower transistor and the current transistor are always cut off when the other is in a conductive state, and therefore, the current running through the circuit is reduced.

Emitter coupled logic circuit with high drivability for capacitive load

Growing community of inventors

Yokohama, Japan

Taichi Saitoh