Tokyo Electron Limited

Taichi Monden

Junichi Kitagawa

Jun Yamashita

Toshiaki Fujisato

Yasushi Fujii

Yu Nunoshige

Hiroaki Ashizawa

Hideo Nakamura

Masaki Koizumi

Seokhyoung Hong

Yoshihiro Miyagawa

Kazuki Ota

Tetsu Zenko

A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).

Film forming method and film forming apparatus

A film forming method includes forming a film by sequentially performing operations for each of a plurality of kinds of reaction gases, the operations being of storing the reaction gas in a storage part to raise a pressure in the storage part to a first pressure and then discharging the reaction gas into the process vessel, while continuously supplying the counter gas, and purging by repeating multiple times operations of storing a purge gas in the storage part provided in the reaction gas supply passage to raise the pressure in the storage part to a second pressure higher than the first pressure, and discharging the purge gas into the process vessel. A flow rate of the counter gas supplied into the process vessel in the purging is smaller than a flow rate of the counter gas supplied into the process vessel in the forming the film.

A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.

Microwave heat treatment apparatus and microwave heat treatment method

There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

Substrate mounting method and substrate mounting device

There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusionis formed at an inner peripheral surface of a cover member. The extended protrusionis formed toward a plasma generation space S and serves as a facing electrode facing an electrodewithin a mounting tablewith the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

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Nirasaki, Japan

Taichi Monden