Dexerials Corporation

Taichi Koyama

Takayuki Saito

Hironobu Moriyama

Takashi Matsumura

Hidetsugu Namiki

Shiyuki Kanisawa

Masaharu Aoki

Akira Ishigami

This adhesive contains an epoxy compound, a cationic catalyst, and an acrylic resin that includes acrylic acid and an acrylic acid ester having a hydroxyl group. The acrylic acid in the acrylic resin reacts with the epoxy compound, creating a link between the acrylic resin island part and the epoxy compound sea part, and strengthening the anchoring effect with respect to the epoxy compound sea part by roughening the surface of an oxide film. Furthermore, the hydroxyl-group-containing acrylic acid ester in the acrylic resin becomes electrostatically adhesive to wiring due to the polarity of the hydroxyl group. Excellent adhesive strength can be obtained by adhering, in this way, the entire cured product composed of the acrylic resin island part and the epoxy compound sea part to the oxide film.

Adhesive and light-emitting device

An underfill material achieving a wide margin for mounting and a method for manufacturing a semiconductor device using the same are provided. The underfill material contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein a minimum melt viscosity attainment temperature and a minimum melt viscosity obtained when melt viscosity of the underfill material is measured under a temperature increase rate condition in a range of 5 to 50&#xb0; C./min are in a range of 100&#xb0; C. to 150&#xb0; C. and in a range of 100 to 5000 Pa&#xb7;s, respectively. Since variation in the minimum melt viscosity attainment temperature measured under different temperature increase conditions is small, voidless mounting and good solder bonding properties can be achieved without strict control on the temperature profile during thermocompression bonding, and a wide margin for mounting can be achieved.

Underfill material and method for manufacturing semiconductor device using the same

An underfill film material and a method for manufacturing a semiconductor device using the same which enables voidless mounting and favorable solder bonding properties are provided. An underfill material is used which contains an epoxy resin, an acid anhydride, an acrylic resin and an organic peroxide, the underfill material exhibits non-Bingham fluidity at a temperature ranging from 60&#xb0; C. to 100&#xb0; C., a storage modulus G' measured by dynamic viscosity measurement has an inflection point in an angular frequency region below 10E+02 rad/s, and the storage modulus G&#x2032; in the angular frequency below the inflection point is 10E+05 Pa or more and 10E+06 Pa or less. This enables voidless packaging and excellent solder connection properties.

An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material, including an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, the minimum melt viscosity being between 1000 Pa*s and 2000 Pa*s, and gradient of melt viscosity between 10&#xb0; C. higher than the minimum melt viscosity attainment temperature and a temperature 10&#xb0; C. higher being between 900 Pa*s/&#xb0; C. and 3100 Pa*s/&#xb0; C., is applied to a semiconductor chip having a solder-tipped electrode formed thereon, and the semiconductor chip is mounted onto a circuit substrate having a counter electrode opposing the solder-tipped electrode, and the semiconductor chip and the circuit substrate are thermocompressed under bonding conditions of raising the temperature from a first temperature to a second temperature at a predetermined rate.

A method for manufacturing a semiconductor device by using underfill material includes: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent; and a reflow step configured to solder-bond the semiconductor chip and the substrate by a reflow furnace. The film forming resin of the underfill material has a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, and accordingly, the viscosity at the time of heat melting can be reduced, and a semiconductor chip can be mounted at a low pressure.

Underfill material and method for manufacturing semiconductor device by using the same

A thermally conductive adhesive having: a thermosetting adhesive containing a curable component and a curing agent for the curable component, and a metal filler dispersed in the thermosetting adhesive uses a silver powder and a solder powder as the metal filler. The solder powder to be used has a melting temperature lower than the thermal curing temperature of the thermally conductive adhesive and produces a high-melting-point solder alloy having a melting point higher than the melting temperature of the solder powder when the solder powder is reacted with the silver powder under thermal curing conditions of the thermally conductive adhesive. A curing agent having flux activity to the metal filler is used as the curing agent.

Thermally conductive adhesive

An epoxy resin composition having excellent connection reliability and transparency, a method for manufacturing a composite unit using the epoxy resin composition, and the composite unit, are disclosed. The manufacturing method includes an attaching step of attaching an epoxy resin composition () containing a novolak phenolic curing agent, an acrylic elastomer composed of a copolymer containing dimethylacrylamide and hydroxylethyl methacrylate, an epoxy resin and not less than 5 parts by weight to not more than 20 parts by weight of an inorganic filler to 100 parts by weight of the epoxy resin, to a printed circuit board () in the form of a sheet. The manufacturing method also includes a temporary loading step of temporarily loading a semiconductor chip () and capacitors () to () on the epoxy resin composition () and an ultimate pressure bonding step of pressuring the semiconductor chip () and capacitors () to () by a thermal bonding head () in situ to ultimately pressure bond the semiconductor chip () and capacitors () to ().

Growing community of inventors

Tochigi, Japan

Taichi Koyama