Tokyo Electron Limited

Taichi Hirano

Chishio Koshimizu

Shinji Kubota

Koji Maruyama

Takashi Dokan

Toru Hayasaka

Akira Koshiishi

Jun Hirose

Masahiro Ogasawara

Michishige Saito

Jun Ooyabu

Hiroyuki Ishihara

Tetsuo Yoshida

Fumitoshi Kumagai

Hiromitsu Sasaki

Kohji Numata

Masanobu Honda

Junji Ishibashi

Shinji Himori

Manabu Iwata

Hidetoshi Hanaoka

Yoshinobu Hayakawa

Keiki Ito

Takanori Mimura

Taketoshi Okajo

Kenji Sato

Hikoichiro Sasaki

Satoshi Yamada

Kunihiro Sato

Ken Yoshida

A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Control method and plasma processing apparatus

A power supply systemincludes high frequency power suppliesandthat supply a high frequency power for plasma generation; a DC power supplythat supplies a DC voltage to be applied to an electrode; and control unitthat controls the high frequency power suppliesandand the DC power supplyincluding a first DC power supply unitthat supplies a first negative DC voltage V, a second DC power supply unitthat supplies a second negative DC voltage Vhaving a higher absolute value than the first negative DC voltage V, and a selecting circuitthat selectively connects the first DC power supply unitand the second DC power supply unitto the electrode; and a discharging circuitconnected with a nodebetween the first DC power supply unitand the selecting circuit

Power supply system

A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.

Plasma processing apparatus and probe apparatus

A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5&#x3c;K&#x3c;1, a constant reflection wave power PRis generated on a high frequency transmission line of a plasma generation system even during a pulse-on period T. Meanwhile, during a pulse-off period T, a reflection wave power PRdecreases. By adjusting the value of K, a balance between the reflection wave power PRduring the pulse-on period Tand the reflection wave power PRduring the pulse-off period Tcan be controlled.

Plasma processing apparatus

A power supply system includes a high frequency power supply which supplies a high frequency power; a DC power supply which supplies a first negative DC voltage or a second negative DC voltage having an absolute value larger than that of the first DC voltage; and a control unit which performs a power supply control process of repeating a supply and a stop of the supply of the high frequency power alternately; stopping supplies of the first and second DC voltages for a first period, which is a time period from a beginning of the supply of the high frequency power within a period during which the high frequency power is being supplied; supplying the first DC voltage for a second period except the first period within the period; and supplying the second DC voltage for a period during which the supply of the high frequency power is stopped.

Power supply system, plasma processing apparatus and power supply control method

Power supply system, plasma etching apparatus, and plasma etching method

Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an Ogas and a F containing gas is supplied toward an outer peripheryof an ESCat a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer peripheryof the ESC; an Osingle gas as a mask gas is supplied to the top surface of ESCexcept the outer periphery; and the shoulder depositadhered to the outer peripheryis decomposed and removed while preventing the top surface of ESCexcept the outer peripheryfrom being exposed to a F radical.

Chamber cleaning method

A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Plasma processing method and apparatus

A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.

Plasma processing apparatus and impedance adjustment method

A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.

Substrate processing method and substrate processing apparatus

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Plasma processing apparatus and method

A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Growing community of inventors

Miyagi, Japan

Taichi Hirano