Taiwan Semiconductor Manufacturing Comp. Ltd.

Wistron Corporation

Tai-Yuan Wang

Chia-Der Chang

Chih-Hsiung Lin

Jung-Ting Chen

Shu-Fang Chen

Tsung-Yin Tsou

Min-Yen Li

Hong-Siou Chen

A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate. The fin structure includes alternately stacking first sacrificial layers and first channel layers. The method also includes forming source/drain features on opposite sidewalls of the fin structure, etching the fin structure to form gate recesses in the fin structure, removing the first sacrificial layers of the fin structure from the gate recesses, thereby forming first gaps exposing the first channel layers, and forming a gate stack in the gate recesses and the first gaps.

Semiconductor structure and method for forming the same

A method of forming a semiconductor device includes forming a first semiconductor strip protruding above a first region of a substrate and a second semiconductor strip protruding above a second region of the substrate, forming an isolation region between the first semiconductor strip and the second semiconductor strip, forming a gate stack over and along sidewalls of the first semiconductor strip and the second semiconductor strip, etching a trench extending into the gate stack and isolation regions, the trench exposing the first region of the substrate and the second region of the substrate, forming a dielectric layer on sidewalls and a bottom surface of the trench and filling a conductive material over the dielectric layer and in the trench to form a contact, where the contact extends below a bottommost surface of the isolation region.

Shallow trench isolation (STI) contact structures and methods of forming same

An exoskeleton wear management method is provided. The method includes receiving inertial data from a sensing system; determining whether a left leg component of an exoskeleton device is parallel to a left leg of a user and a right leg component of the exoskeleton device is parallel to a right leg of the user according to the received inertial data; in response to determining that the left leg component/the right leg component is not parallel to the left leg/the right leg of the user, prompting an adjusting left leg component message/an adjusting right leg component message; and in response to determining that the left leg component is parallel to the left leg of the user and the right leg component is parallel to the right leg of the user, prompting a left leg component and right leg component correctly-worn message.

Exoskeleton wear management system and exoskeleton wear management method

A method includes forming a dielectric cap over a semiconductor substrate; forming a dummy gate structure over the dielectric cap; forming gate spacers on opposite sidewalls of the dummy gate structure and on a top surface of the dielectric cap; removing the dummy gate structure to form a gate trench between the gate spacers and exposing the dielectric cap; and performing an ion implantation to form a doped region in the semiconductor substrate through the dielectric cap.

Semiconductor device and method of forming doped channel thereof

A semiconductor device includes a plurality of gate spacers, a gate conductor, and first and semiconductor features. The gate conductor is between the gate spacers. The first semiconductor feature underlies the gate conductor and has impurities therein. The second semiconductor feature underlies at least one of the gate spacers and substantially free from the impurities of the first semiconductor feature.

A method includes forming a fin structure over a substrate; forming an isolation structure around the fin structure; etching the fin structure to form a recess in the fin structure; epitaxially growing a source drain structure in the recess; depositing a capping layer over a first portion of the source drain structure, in which the first portion of the source drain structure is over the isolation structure; recessing the isolation structure to expose a second portion of the source drain structure; and etching the second portion of the source drain structure, in which the first portion of the source drain structure remains over the isolation structure after etching the second portion of the source drain structure.

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a semiconductor substrate, at least one source drain structure, an insulating layer, and a gate. The semiconductor substrate includes a base portion and at least one fin. The fin is disposed on the base portion. The source drain structure is disposed on at least one sidewall of the fin. The insulating layer is disposed between the base portion and the source drain structure to isolate the base portion and the source drain structure. The gate is disposed on the fin.

A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Method of fabricating a MOSFET with an undoped channel

Methods and structure for a semiconductor device is disclosed, which provides a semiconductor device that includes an integral semiconductor fin structure having a middle section defining a channel region of the semiconductor device. The middle section includes an embedded root portion protruding from an insulating surface on a substrate and a suspended overhead portion arranged above the root portion, which is separated from the overhead portion by a predetermined distance. The root portion and the overhead portion respectively define a substantially identical channel direction. The device further includes a gate structure disposed over the fin structure at the middle section. The gate structure wraps around a cross-section of the overhead portion and caps over the protruded portion of the root portion.

Growing community of inventors

Taipei, Taiwan

Tai-Yuan Wang