Taiwan Semiconductor Manufacturing Comp. Ltd.

Tai-Wei Hwang

Da-Yuan Lee

Ching-Hwanq Su

Chung-Chiang Wu

Kuan-Ting Liu

Hung-Chin Chung

Cheng-Yen Tsai

Wei-Chin Lee

Yin-Chuan Chuang

Shih-Hang Chiu

Ji-Cheng Chen

Chung-Yi Su

Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Pre-deposition treatment for FET technology and devices formed thereby

Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (&#x2014;OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the &#x2014;OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Certain embodiments of a semiconductor device and a method of forming a semiconductor device comprise forming a high-k gate dielectric layer over a short channel semiconductor fin. A work function metal layer is formed over the high-k gate dielectric layer. A seamless metal fill layer is conformally formed over the work function metal layer.

Metal gate fill for short-channel and long-channel semiconductor devices

Growing community of inventors

Kinmen, Taiwan

Tai-Wei Hwang